Volume 55, Issue 43 p. 13615
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Inside Back Cover: Vacancy-Induced Electronic Structure Variation of Acceptors and Correlation with Proton Conduction in Perovskite Oxides (Angew. Chem. Int. Ed. 43/2016)

Hye-Sung Kim

Hye-Sung Kim

Graduate School of EEWS, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141 Korea

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Ahreum Jang

Ahreum Jang

Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141 Korea

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Dr. Si-Young Choi

Dr. Si-Young Choi

Korea Institute of Materials Science, Changwon, 51508 Korea

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Prof. WooChul Jung

Prof. WooChul Jung

Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141 Korea

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Prof. Sung-Yoon Chung

Corresponding Author

Prof. Sung-Yoon Chung

Graduate School of EEWS, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141 Korea

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First published: 28 September 2016

Graphical Abstract

Proton trapping is a major cause of retardation of proton conduction in the bulk of perovskite oxides and results from the strong electrostatic attraction between positively charged protons and negatively charged acceptors. In their Communication on page 13499 ff., S.-Y. Chung and co-workers show that clustering of oxygen vacancies to acceptors can be induced by post-annealing and that proton trapping is thereby suppressed. The impact of the oxygen vacancies and their effective charge on ionic conduction is shown.

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