Frequency Comb Effect on Chaos in Semiconductor Lasers, a Bifurcation Study
This article is part of Special Issue:
Najm M. Al-Hosiny,
Corresponding Author
Najm M. Al-Hosiny
Department of Physics , College of Science , Taif University , P.O. Box 1109, Taif , 21944 , Saudi Arabia , tu.edu.sa
Search for more papers by this authorNajm M. Al-Hosiny,
Corresponding Author
Najm M. Al-Hosiny
Department of Physics , College of Science , Taif University , P.O. Box 1109, Taif , 21944 , Saudi Arabia , tu.edu.sa
Search for more papers by this authorFirst published: 16 June 2025
Academic Editor: Haochong Huang
Abstract
This study investigates the effects of optical frequency comb injection on the chaotic dynamics of semiconductor lasers through a bifurcation analysis. By examining the behavior of semiconductor lasers under different comb parameters (i.e., the number of signals, comb spacing), the research explores how these factors influence the system’s transition from stable and periodic to chaotic regimes. Bifurcation diagrams for both 3-signal and 5-signal combs reveal complex nonlinear patterns, especially with varying frequency detuning and injection strength. The findings show that increasing the number of signals and comb spacing intensifies the nonlinear interactions, leading to faster transitions to chaos and richer dynamical states. Increasing comb spacing has also shown to enhance periodicity of the system regardless of the number of signals. This study provides insights into the routes to chaos in optically injected semiconductor lasers and highlights the potential of frequency comb manipulation for controlling chaos, with applications in secure communication, high-speed signal processing, and dual-comb spectroscopy.
Conflicts of Interest
The authors declare no conflicts of interest.
Open Research
Data Availability Statement
The data that support the findings of this study are available within the article.
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