Volume 2025, Issue 1 8585226
Research Article
Open Access

Highly Transparent Spectral Tunable Electrochromic Window Based on Solid-State WO3 Thin Films

Malkeshkumar Patel

Malkeshkumar Patel

Photoelectric and Energy Device Application Lab (PEDAL) , Multidisciplinary Core Institute for Future Energies (MCIFE) , Incheon National University , Yeonsu-gu, Incheon , Republic of Korea , inu.ac.kr

Department of Electrical Engineering , Incheon National University , Yeonsu-gu, Incheon , Republic of Korea , inu.ac.kr

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Manutious

Manutious

Photoelectric and Energy Device Application Lab (PEDAL) , Multidisciplinary Core Institute for Future Energies (MCIFE) , Incheon National University , Yeonsu-gu, Incheon , Republic of Korea , inu.ac.kr

Department of Electrical Engineering , Incheon National University , Yeonsu-gu, Incheon , Republic of Korea , inu.ac.kr

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Shuvaraj Ghosh

Shuvaraj Ghosh

Photoelectric and Energy Device Application Lab (PEDAL) , Multidisciplinary Core Institute for Future Energies (MCIFE) , Incheon National University , Yeonsu-gu, Incheon , Republic of Korea , inu.ac.kr

Department of Electrical Engineering , Incheon National University , Yeonsu-gu, Incheon , Republic of Korea , inu.ac.kr

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Seunghee Cho

Seunghee Cho

Photoelectric and Energy Device Application Lab (PEDAL) , Multidisciplinary Core Institute for Future Energies (MCIFE) , Incheon National University , Yeonsu-gu, Incheon , Republic of Korea , inu.ac.kr

Department of Electrical Engineering , Incheon National University , Yeonsu-gu, Incheon , Republic of Korea , inu.ac.kr

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Joondong Kim

Corresponding Author

Joondong Kim

Photoelectric and Energy Device Application Lab (PEDAL) , Multidisciplinary Core Institute for Future Energies (MCIFE) , Incheon National University , Yeonsu-gu, Incheon , Republic of Korea , inu.ac.kr

Department of Electrical Engineering , Incheon National University , Yeonsu-gu, Incheon , Republic of Korea , inu.ac.kr

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First published: 23 January 2025
Citations: 1
Academic Editor: Weixin Guan

Abstract

Energy conservation is crucial for sustainable growth. Electrochromic window devices, which regulate optical transmittance using light-tunable materials like WO3, can significantly reduce both thermal and visual energy consumption in buildings. In this study, we developed solid-state WO3 thin film-based electrochromic window using room-temperature sputtering. The WO3 film was grown through reactive sputtering of a tungsten target, resulting in highly transparent films with structural and optical properties well-suitable for electrochromic devices. These films exhibit efficient coloration and fast response times. WO3-based electrochromic devices offer superior modulation across ultraviolet, visible, and infrared (IR) wavelengths, blocking over 95% of IR wavelengths. Key performance metrics include a coloration efficiency of 96.96 cm2 C−1, optical modulation of 68.5% in the visible region, reversibility of 88.1%, and response time of 10 s (coloration time) and 24 s (bleaching time). These results highlight the potential of WO3-based electrochromic windows for energy conservation, making them ideal for integration into building structures as energy-sustainable entities.

1. Introduction

The global demand for energy has increased significantly. At the same time, the depletion of conventional energy sources, particularly fossil fuels, has serious environmental consequences, highlighting the importance of energy conservation alongside green energy production. Buildings account for a considerable portion of total energy consumption (≈40%), with around one-third dedicated to heating and air conditioning [1]. Numerous strategies have been developed for energy-efficient buildings, including solar energy (solar thermal, photovoltaic cells, and hybrid systems), heat pumps (air- and water-based ventilation systems), biomass (domestic biomass boilers), wind energy (turbine based), hydro energy (rainwater and nearby rivers), and hybrid heating systems (combining solar with heat pumps, biomass pellet boilers, heat pumps with boilers) [2]. Windows featuring variable transmittance, which utilize color-changing technologies, can save up to 50%–75% of this energy [3].

Electrochromism (EC) is a technology that modulates the color and optical properties of materials in response to an applied electrical stimulus, tuning the light propagation for selectivity and lowering energy consumption. This functionality allows windows to dynamically regulate indoor temperature and natural light transmission, significantly improving both energy efficiency and occupant comfort. EC materials include inorganic materials (e.g., WO3, NiO, ZnO), small organic molecules (e.g., viologens, organic redox dyes), conjugated polymers (e.g., polyaniline, polythiophene), and metal–organic compounds [4]. However, implementing such color-changing windows presents challenges related to material processing, stability, efficiency, cost, and toxicity. Beyond windows, electrochromic materials are also used in electronic displays, antiglare mirrors, spacecraft thermal control systems, and energy storage devices.

Tungsten trioxide (WO3), a transition metal oxide, is widely recognized for its electrochromic properties, including good coloration efficiency, improved cyclic stability and reversibility, low power consumption, nontoxicity, and strong substrate adhesion [5]. It allows the insertion and extraction of positive cations (H+, Li+, Na+, and K+) into its interstitial space under a reversible electric field, facilitating redox reactions resulting in reversible color changes. Various deposition techniques have been used to create high-quality WO3 thin films, including electron beam evaporation, thermal evaporation, spray pyrolysis, pulsed laser deposition, hydrothermal synthesis, sol–gel processes, spin coating, and magnetron sputtering [6]. Magnetron sputtering is particularly suited for large-scale applications due to its high deposition rate, superior adhesion, precise thickness control, uniform film quality over large areas, and high film density. In this study, electrochromic WO3 thin films were synthesized using direct current (DC) reactive magnetron sputtering with a W metal target in a controlled argon/oxygen atmosphere at ambient temperature, as shown by the chemical equation below and schematically in Figure 1a:
(1)
Details are in the caption following the image
(a) Schematic diagram of solid phase fabrication of WO3 thin film by reactive sputtering, (b) XRD pattern of WO3 on FTO substrate with standard JCPDS patterns for WO3 (01-075-2187) and SnO2 (041-1445), (c) optical constants (n is the refractive index, and k is the extinction coefficient) of WO3, (d) transmittance and absorption coefficient of fabricated WO3 thin film on FTO substrate, (e) cross-sectional SEM image of the working electrode, (f) EDX mapping of W, O, and Sn in the EC device, and (g) XPS survey scan spectrum for WO3 film. Binding energy spectrum for (h) W 4f and (i) O 1s valence state. Contributions of lattice oxygen and oxygen vacancy in the present WO3 film are labeled in (i). EDX, energy-dispersive X-ray; FTO, fluorine-doped tin oxide; XRD, X-ray diffraction.
Details are in the caption following the image
(a) Schematic diagram of solid phase fabrication of WO3 thin film by reactive sputtering, (b) XRD pattern of WO3 on FTO substrate with standard JCPDS patterns for WO3 (01-075-2187) and SnO2 (041-1445), (c) optical constants (n is the refractive index, and k is the extinction coefficient) of WO3, (d) transmittance and absorption coefficient of fabricated WO3 thin film on FTO substrate, (e) cross-sectional SEM image of the working electrode, (f) EDX mapping of W, O, and Sn in the EC device, and (g) XPS survey scan spectrum for WO3 film. Binding energy spectrum for (h) W 4f and (i) O 1s valence state. Contributions of lattice oxygen and oxygen vacancy in the present WO3 film are labeled in (i). EDX, energy-dispersive X-ray; FTO, fluorine-doped tin oxide; XRD, X-ray diffraction.
Details are in the caption following the image
(a) Schematic diagram of solid phase fabrication of WO3 thin film by reactive sputtering, (b) XRD pattern of WO3 on FTO substrate with standard JCPDS patterns for WO3 (01-075-2187) and SnO2 (041-1445), (c) optical constants (n is the refractive index, and k is the extinction coefficient) of WO3, (d) transmittance and absorption coefficient of fabricated WO3 thin film on FTO substrate, (e) cross-sectional SEM image of the working electrode, (f) EDX mapping of W, O, and Sn in the EC device, and (g) XPS survey scan spectrum for WO3 film. Binding energy spectrum for (h) W 4f and (i) O 1s valence state. Contributions of lattice oxygen and oxygen vacancy in the present WO3 film are labeled in (i). EDX, energy-dispersive X-ray; FTO, fluorine-doped tin oxide; XRD, X-ray diffraction.
Details are in the caption following the image
(a) Schematic diagram of solid phase fabrication of WO3 thin film by reactive sputtering, (b) XRD pattern of WO3 on FTO substrate with standard JCPDS patterns for WO3 (01-075-2187) and SnO2 (041-1445), (c) optical constants (n is the refractive index, and k is the extinction coefficient) of WO3, (d) transmittance and absorption coefficient of fabricated WO3 thin film on FTO substrate, (e) cross-sectional SEM image of the working electrode, (f) EDX mapping of W, O, and Sn in the EC device, and (g) XPS survey scan spectrum for WO3 film. Binding energy spectrum for (h) W 4f and (i) O 1s valence state. Contributions of lattice oxygen and oxygen vacancy in the present WO3 film are labeled in (i). EDX, energy-dispersive X-ray; FTO, fluorine-doped tin oxide; XRD, X-ray diffraction.
Details are in the caption following the image
(a) Schematic diagram of solid phase fabrication of WO3 thin film by reactive sputtering, (b) XRD pattern of WO3 on FTO substrate with standard JCPDS patterns for WO3 (01-075-2187) and SnO2 (041-1445), (c) optical constants (n is the refractive index, and k is the extinction coefficient) of WO3, (d) transmittance and absorption coefficient of fabricated WO3 thin film on FTO substrate, (e) cross-sectional SEM image of the working electrode, (f) EDX mapping of W, O, and Sn in the EC device, and (g) XPS survey scan spectrum for WO3 film. Binding energy spectrum for (h) W 4f and (i) O 1s valence state. Contributions of lattice oxygen and oxygen vacancy in the present WO3 film are labeled in (i). EDX, energy-dispersive X-ray; FTO, fluorine-doped tin oxide; XRD, X-ray diffraction.
Details are in the caption following the image
(a) Schematic diagram of solid phase fabrication of WO3 thin film by reactive sputtering, (b) XRD pattern of WO3 on FTO substrate with standard JCPDS patterns for WO3 (01-075-2187) and SnO2 (041-1445), (c) optical constants (n is the refractive index, and k is the extinction coefficient) of WO3, (d) transmittance and absorption coefficient of fabricated WO3 thin film on FTO substrate, (e) cross-sectional SEM image of the working electrode, (f) EDX mapping of W, O, and Sn in the EC device, and (g) XPS survey scan spectrum for WO3 film. Binding energy spectrum for (h) W 4f and (i) O 1s valence state. Contributions of lattice oxygen and oxygen vacancy in the present WO3 film are labeled in (i). EDX, energy-dispersive X-ray; FTO, fluorine-doped tin oxide; XRD, X-ray diffraction.
Details are in the caption following the image
(a) Schematic diagram of solid phase fabrication of WO3 thin film by reactive sputtering, (b) XRD pattern of WO3 on FTO substrate with standard JCPDS patterns for WO3 (01-075-2187) and SnO2 (041-1445), (c) optical constants (n is the refractive index, and k is the extinction coefficient) of WO3, (d) transmittance and absorption coefficient of fabricated WO3 thin film on FTO substrate, (e) cross-sectional SEM image of the working electrode, (f) EDX mapping of W, O, and Sn in the EC device, and (g) XPS survey scan spectrum for WO3 film. Binding energy spectrum for (h) W 4f and (i) O 1s valence state. Contributions of lattice oxygen and oxygen vacancy in the present WO3 film are labeled in (i). EDX, energy-dispersive X-ray; FTO, fluorine-doped tin oxide; XRD, X-ray diffraction.
Details are in the caption following the image
(a) Schematic diagram of solid phase fabrication of WO3 thin film by reactive sputtering, (b) XRD pattern of WO3 on FTO substrate with standard JCPDS patterns for WO3 (01-075-2187) and SnO2 (041-1445), (c) optical constants (n is the refractive index, and k is the extinction coefficient) of WO3, (d) transmittance and absorption coefficient of fabricated WO3 thin film on FTO substrate, (e) cross-sectional SEM image of the working electrode, (f) EDX mapping of W, O, and Sn in the EC device, and (g) XPS survey scan spectrum for WO3 film. Binding energy spectrum for (h) W 4f and (i) O 1s valence state. Contributions of lattice oxygen and oxygen vacancy in the present WO3 film are labeled in (i). EDX, energy-dispersive X-ray; FTO, fluorine-doped tin oxide; XRD, X-ray diffraction.
Details are in the caption following the image
(a) Schematic diagram of solid phase fabrication of WO3 thin film by reactive sputtering, (b) XRD pattern of WO3 on FTO substrate with standard JCPDS patterns for WO3 (01-075-2187) and SnO2 (041-1445), (c) optical constants (n is the refractive index, and k is the extinction coefficient) of WO3, (d) transmittance and absorption coefficient of fabricated WO3 thin film on FTO substrate, (e) cross-sectional SEM image of the working electrode, (f) EDX mapping of W, O, and Sn in the EC device, and (g) XPS survey scan spectrum for WO3 film. Binding energy spectrum for (h) W 4f and (i) O 1s valence state. Contributions of lattice oxygen and oxygen vacancy in the present WO3 film are labeled in (i). EDX, energy-dispersive X-ray; FTO, fluorine-doped tin oxide; XRD, X-ray diffraction.

This method produced high-quality solid-state WO3 films at low temperatures and on a large scale. Additionally, stochiometric manipulations can be made by controlling the deposition parameters to improve the electrochromic performance.

The wavelength-selective filtering of solar radiation plays a crucial role in protecting against harmful ultraviolet (UV) radiation, which can cause skin cancers, photosensitivity disorders, eye diseases, virus infections due to immune suppression, and biomaterial degradation. Filtering infrared (IR) radiation is equally important for temperature regulation [7]. Electrochromic windows can block unwanted or harmful radiation while allowing visible light transmission through optical modulation. By absorbing UV and IR radiation, windows can transition from passive to active energy sources. Our group has reported highly efficient transparent photovoltaics [8], which could be integrated with electrochromic windows to create self-powered, energy-saving solutions.

Electrochromic device performance is evaluated through parameters such as transmittance modulation, switching time, coloration efficiency, and reversibility [9]. Transmittance modulation (∆T), or color contrast, refers to the change in the transmittance between the bleached and colored states. Switching time, or response time, measures the duration required for 90% of the maximum transmittance change, with coloration time (τc) for the transition from bleached to colored state and bleaching time (τb) for the reverse. Coloration efficiency indicates the device’s power efficiency and is calculated as the slope of the optical density versus charge density curve. Reversibility refers to the ratio of intercalated to de-intercalated charge; poor reversibility is a problem where the ions intercalated to the lattice of the electrochromic material will not extract fully and remain colored state after voltage reversal.

In this study, WO3 films were deposited on fluorine-doped tin oxide (FTO) substrates using reactive sputtering to analyze their electrochromic performance. Parameters such as coloration efficiency, optical modulation, reversibility, coloration time, bleaching time, stability, and diffusion coefficient are discussed. A WO3/FTO electrode with a diluted HCl electrolyte was used as the working electrode, where the rapid injection and extraction of small H+ ions in the electrolyte modulated the optical properties of the WO3. The EC window offers fast operation and light regulation by bias control, including UV, visible, and IR regions.

2. Experimental Details

2.1. Preparation of WO3 Thin Films

Electrochromic WO3 films were fabricated on 6.25 cm2 glass and FTO-coated glass substrates (7 Ω∕square, 735 159, Aldrich) by DC reactive magnetron sputtering, using a 4-inch metal tungsten metal target (Dasom RMS Co. Ltd.; 99.99%). The substrates were ultrasonically cleaned in acetone, methanol, and deionized water for 10 min each, followed by flowing nitrogen gas. In the sputtering chamber, tungsten atoms from the metal target were ejected by argon plasma sputtering and reacted with oxygen gas flowing in the chamber to form WO3, which was then deposited onto FTO-coated glass substrates. The base pressure in the chamber was reduced to 10−6 mTorr before deposition. Kapton tape was used to mask the FTO films for the cathode connection. The temperature and pressure were set to 25°C and 5 mTorr, respectively. The target was presputtered for 10 min to eliminate the contamination in the argon environment. Following this, WO3 was deposited for 500 s to achieve a film thickness of 100 nm, using a DC power of 150 W with an argon flow rate of 20 sccm and an oxygen flow rate of 5 sccm. The substrate was rotated at five rotations per minute during the deposition to ensure uniform film coverage.

2.2. Characterization of WO3 Thin Films

The structural properties of the WO3 films were determined by X-ray diffraction (XRD, Hypix3000) over a 2θ range from 10° to 70°. The transmittance spectra of the films were obtained using a UV–vis–NIR spectrophotometer (Shimadzu, UV-2600). In situ transmittance measurements for specific wavelengths were performed in kinetic mode, while spectrum mode was used for the UV, visible, and IR broad-spectrum transmittance measurements. Scanning electron microscopy (JSM 7800F) is used to obtain surface morphology and cross-section images. The elemental compositions were recorded using the energy-dispersive X-ray analysis system (EDX, Oxford Instruments). The chemical states of WO3 films were analyzed by X-ray photoelectron spectroscopy (XPS, ULVAC-PHI). The film thickness, growth rate, and optical constants are determined by spectroscopic ellipsometry (JA Woollam Alpha-SE). The electrochromic properties of WO3 film were recorded by an electrochemical workstation (WonA tech, Zive SP2). The WO3 films were tested in 0.01 M aqueous HCl electrolyte, wherein the film was the working electrode, and the platinum gauze was the counter electrode. Cyclic voltammetry (CV) measurements were conducted in the range from −3 to 1 V with a scan rate of 100 mV/s.

3. Results and Discussion

3.1. Growth of WO3 at Room Temperature

WO3 thin films were grown using a physical vapor deposition process, specifically reactive DC magnetron sputtering, as depicted in Figure 1a. Tungsten can exist in multiple oxidation states, with W6+ being the most stable and promoting oxide formation. A high DC voltage was applied to ionize argon gas, creating a plasma. This plasma consists of accelerated Ar+ ions confined around the tungsten target by a magnetic field. The high-energy collisions between the argon ions and the target release tungsten atoms, which then travel to the substrate, forming the WO3 film. After oxygen gas is introduced into the system, O2 molecules are ionized to O2− species. These ions react with the tungsten atoms (W6+) in the vacuum chamber, resulting in the spontaneous formation of WO3 at room temperature [10]. Due to the higher ionization energy of the sputtering plasma, the injected oxygen gas turned into ionized species, which then collided with the tungsten species of higher kinetic energy [11]. This energetic interaction between the sputtered tungsten and ionized oxygen resulted in the spontaneous formation of WO3 on the substrate surface, leading to thin film growth. Room-temperature deposition makes this process suitable for substrates such as PET and other polymer sheets, enabling flexible applications. Lower temperatures also result in more amorphous WO3, which enhances the film’s coloration properties [12]. Our findings show that a gas mixture of 5 sccm O2 and 20 sccm Ar produces the WO3 phase, as confirmed by XRD and SEM measurements in the following sections.

3.2. Structural, Optical, Physical, and Chemical Properties of WO3 Thin Film

The crystal structure and stoichiometry of WO3 greatly influence its electrochromic properties. The XRD pattern of WO3 deposited on the FTO glass (Figure 1b) reveals peaks corresponding to the hexagonal phase of WO3, indexed to (201), (200), (001), and (100) planes according to JCPDS No. 01-075-2187 and SnO2 according to JCPDS 041-1445 [13, 14]. The crystallite size of the deposited film is calculated to be 40.88 nm using Scherrer formula (Equation 2) [15]:
(2)
where D is the crystallite size in nm, k is the shape factor with a value of 0.94, λ is the X-ray wavelength (1.5406 Å), β is the full-width at half maximum with a value of 0.21° for (201) peak, and θ is the Bragg angle (18.88°). The surface morphology SEM image reveals the highly uniform and crystalline nature of the sputtered film (Supporting Information 1: Figure S1). The thickness of the deposited WO3 layer is around 975 nm, as measured by spectroscopic ellipsometry, corresponding to a growth rate of 0.2 nm s−1 higher than previously reported results [16]. Ellipsometry analysis (Figure 1c) shows the optical constant, confirming refractive index (n), and extinction coefficient (k) values of 2.05–2.33 and 0–0.007, respectively, in the 400–900 nm wavelength range, comparable to those reported for high-quality WO3 films [17]. The dielectric constant (ε) is calculated to be between 4.20 and 5.44 using Equation (3):
(3)
The absorption coefficient (α) of the film is estimated using Equation (4):
(4)
where d, R, and T are the film thickness, reflectance, and transmittance, respectively (Figure 1d). The absorption coefficient α was calculated in the range from 4.35 × 104 to 1.51 × 104 cm−1 for the wavelength from 400 to 700 nm. The energy bandgap (Eg) of the WO3 film is determined using a Tauc plot (Supporting Information 1: Figure S2), confirming a direct Eg value of 2.64 eV [18]. Additionally, Figure 1e shows a cross-section of the WO3 film on the FTO/glass, confirming a thickness of 1 μm, consistent with ellipsometry results. Figure 1f presents EDX mapping of tungsten, oxygen, and tin. Elemental distribution confirmed by the topography of WO3 showed stoichiometric preparation (Supporting Information 1: Figure S1). The stoichiometric proportion of O:W is calculated as 2.9 by the atomic percentage (atomic% of W is 25.59 and O is 74.41), indicating the formation of WO3 at par with XRD results.

The electrochromic performance of WO3 thin films strongly depends on their oxidation state, as this determines the material’s ability to intercalate and de-intercalate ions, leading to changes in optical properties. This process is primarily governed by the reduction and oxidation of tungsten, which modulates the material’s electronic structure and optical absorption. The XPS spectra of deposited WO3 films are collected to investigate the W element’s oxidation state and the film’s stoichiometry. Figure 1g,h shows the survey spectra of WO3 film and the high-resolution binding energy spectra of W 4f, respectively. Figure 1h presents the 7/2 and 5/2 spin–orbit doublet for the W 4f valence state. The binding energies of W 4f7/2 and W 4f5/2 levels are observed at around 35.6 and 37.8 eV, which correspond to the W6+ and W5+ oxidation states, respectively [19]. Controlling the oxidation state during ion intercalation and extraction is critical for optimizing the electrochromic contrast, efficiency, and durability of WO3 thin films. Figure 1i shows the deconvoluted O 1s spectra, which confirms the presence of oxygen vacancies in the present WO3 film. The substoichiometric of the WO3 films can be roughly estimated through the O/W atomic ratios calculated from the area covered by XPS peaks O 1s and W 4f, as summarized in Table 1.

Table 1. Estimation of O/W atomic ratios calculated from the area covered by XPS peaks O 1s and W 4f.
Elements Area (P) CPS (eV) Atomic (%) O/W ratio
W4f 7,837,841.48 15.19 3.29
O1s 4,876,020.83 49.99
C1s 1,239,052.88 30.73

3.3. Optical Modulations by Electrochromic Window

The optical transmission spectrum (Figure 2a) of WO3-coated FTO/glass shows 62.6% transmission at 550 nm and a maximum transmission of 73.8% at 930 nm. However, when a 3 V potential is applied, the transmittance drops rapidly to less than 15% at 550 nm and 1.9% at 930 nm. When the potential is reversed to −1 V, the transmittance returns to 61.9% at 550 nm and 68.3% at 930 nm. The transmittance modulation (∆T) is a significant factor for electrochromic performance, calculated using Equation (5):
(5)
where Tb and Tc represent the transmittance in the bleached and colored states, respectively. Figure 2a and Table 2 show that the electrochromic layer achieves a ∆T of ~58.4% at 550 nm and ∆T maximum 63.1% at 880 nm. Figure 2b,c illustrates spectral tunability as a function of applied bias. Initially, the average transmittance in the UV (220–400 nm), visible (400–800 nm), and IR (800–1400 nm) regions is 11%, 68%, and 65%, respectively. With a 3 V bias, these values drop to 7.5%, 7.8%, and 2%, respectively, but they recover when the voltage is reversed. The color of WO3 can be adjusted by changing the applied bias. Figure 2d shows digital pictures of the EC device working electrode in various stages, confirming that it is transparent at +1 V and gradually becomes opaque as the bias decreases to −3 V. The electrochromic window also serves as an optical filter, blocking UV and IR wavelengths in its colored state. A substantial amount of detrimental radiation is filtered out using this structure with the electrochromic application. Thermal regulation also can be done by rejecting the IR wavelength.
Details are in the caption following the image
(a) Optical transmittance curves at various applied biases, (b) average transmittance as a function of bias voltage in UV and IR regions, (c) transmittance variation in visible and 550 nm wavelengths on different bias conditions, and (d) digital photograph of change in the optical properties of electrochromic WO3 film with bias control. IR, infrared; UV, ultraviolet.
Details are in the caption following the image
(a) Optical transmittance curves at various applied biases, (b) average transmittance as a function of bias voltage in UV and IR regions, (c) transmittance variation in visible and 550 nm wavelengths on different bias conditions, and (d) digital photograph of change in the optical properties of electrochromic WO3 film with bias control. IR, infrared; UV, ultraviolet.
Details are in the caption following the image
(a) Optical transmittance curves at various applied biases, (b) average transmittance as a function of bias voltage in UV and IR regions, (c) transmittance variation in visible and 550 nm wavelengths on different bias conditions, and (d) digital photograph of change in the optical properties of electrochromic WO3 film with bias control. IR, infrared; UV, ultraviolet.
Details are in the caption following the image
(a) Optical transmittance curves at various applied biases, (b) average transmittance as a function of bias voltage in UV and IR regions, (c) transmittance variation in visible and 550 nm wavelengths on different bias conditions, and (d) digital photograph of change in the optical properties of electrochromic WO3 film with bias control. IR, infrared; UV, ultraviolet.
Table 2. Comparison of WO3-based electrochromic device performances of previously reported devices with this study.
Structure Fabrication Electrolyte

Bias

(V)

τb/τc

(s)

∆T = Tb-Tc

(%)

CE

(cm2 C−1)

Stability

(cycles)

Durability Year/ref.
ITO/VO2/Ta2O5/WO3/ITO/glass
  • Reactive DC Sputtering W target, 500 W
  • 500°C
0.5M H2SO4 −2 to +2 30
  • 44.95
  • at 550 nm
32.65 100 ˟ 2019 [31]
ITO/Tb-WO3
  • Hydrothermal,
  • 300°C
0.5M H2SO4 −1 to +1.5
  • 9.99/
  • 3.7
  • 66.71
  • at 680 nm
48.33 600 ˟ 2019 [32]
WO3 quantum dots
  • Air-brush spray coating,
  • 180°C
  • 0.2M
  • LiClO4
−0.8 to +0.6
  • 4.5/
  • 4
  • 90.4
  • at 633 nm
76.8 10,000–20,000 ˟ 2020 [33]
ITO/WO3 Reactive RF sputtering using W target, 80 W, 70−400°C
  • 1M
  • LiClO4
−0.8 to +0.8
  • 5.3/
  • 3
  • 72.5
  • at 1000 nm
80.5 1000 ˟ 2020 [34]
FTO/WO3 Reactive DC sputtering W target, 50 W
  • 1M
  • LiClO4
−1.5 to +1
  • 10.8/
  • 92.6
  • 63.4
  • at 633 nm
46.9 55 ˟ 2020 [35]
ITO/WO3 RF sputtering WO3 target, power 75 W, growth rate 0.09 nm s−1 LiTFSI in EMIM-TFSI −1 to +1
  • 15.3/
  • 5.2
  • 61.1
  • at 550 nm
58 5 ˟ 2023 [36]
Ti-doped WO3-x
  • Sol–gel
  • 250−500°C
  • 1M
  • LiClO4
1.5V to −1 5/3.3 70 at 633 nm 114.9 1000 ˟ 2023 [37]
ITO/PANI Doctor blad at 430°C and electrodeposition
  • 1M
  • LiClO4
−1 to 1.2 6/19 59 600 ˟ 2020 [38]
TiO2-x
  • HF assisted one-pot synthesis
  • 200°C, 24 h
  • 1M
  • LiCl4
−1.5 to 1 4.7/21.7 32.1 10.2 42 ˟ 2022 [39]
Nb12O29
  • Hot injection and annealing
  • 300°C
  • 1M
  • Li-TFSI
2.5 70 77.3 500 ˟ 2020 [40]
Nb-doped TiO2/Pt-plated ITO
  • One-pot N2
  • 290°C
  • 1M
  • LiClO4
─4 to 0 10/105 70 200 ˟ 2017 [41]
NiO Reactive DC sputtering, Ni target, power 50 W, 350°C 1M KOH and 1M LiClO4/PC −1 to +1
  • 5.4
  • 4
  • 89.5 with KOH
  • 64.8 with LiClO4
  • at 550 nm
46 1000 ˟ 2024 [42]
FTO/WO3 Reactive sputtering W target, power 150 W, 25°C
  • 0.01M
  • HCl
−3 to +1 10/24
  • 68.5
  • at 550 nm
96.96 1000
  • 0−50°C
This work
  • Note: T is the process temperature, τc and τb are the time for coloration and bleach state, Tb and Tc are the transmittance for bleach and coloration state, and CE is the coloration efficiency. ΔT was estimated at 550 nm.

3.4. Electrochromic Performance of WO3 Thin Film

The electrochromic properties of WO3 films were analyzed using an electrochemical workstation and UV–visible spectrophotometer. To investigate the electrochemical reaction process, CV curves were measured in a two-electrode electrochemical cell system in 0.01 M HCl solution. Figure 3a shows the cyclic voltammogram, where the voltage is swept from −3 to 1 V at a scan rate of 100 mV s−1. The redox reaction refers to the insertion/extraction of H+ ions and electrons in the WO3 matrix, with the transmittance changing between blue and transparent (Equation 9).

Details are in the caption following the image
(a) Cyclic voltammogram at the scan rate of 100 mV s−1. The insets show the photographs of colored and bleached film, (b) in situ change of transmittance at 550 nm and current density with respect to time, (c) coloration efficiency, and (d) transmittance curve at 550 nm with switching response under square wave potential of −3 and 1 V for 60 s.
Details are in the caption following the image
(a) Cyclic voltammogram at the scan rate of 100 mV s−1. The insets show the photographs of colored and bleached film, (b) in situ change of transmittance at 550 nm and current density with respect to time, (c) coloration efficiency, and (d) transmittance curve at 550 nm with switching response under square wave potential of −3 and 1 V for 60 s.
Details are in the caption following the image
(a) Cyclic voltammogram at the scan rate of 100 mV s−1. The insets show the photographs of colored and bleached film, (b) in situ change of transmittance at 550 nm and current density with respect to time, (c) coloration efficiency, and (d) transmittance curve at 550 nm with switching response under square wave potential of −3 and 1 V for 60 s.
Details are in the caption following the image
(a) Cyclic voltammogram at the scan rate of 100 mV s−1. The insets show the photographs of colored and bleached film, (b) in situ change of transmittance at 550 nm and current density with respect to time, (c) coloration efficiency, and (d) transmittance curve at 550 nm with switching response under square wave potential of −3 and 1 V for 60 s.
One key parameter for analyzing electrochromic properties is coloration efficiency (ηCE), which is calculated as the function of charge used to obtain the optical modulation. The coloration efficiency is expressed in cm2 C−1 units and is calculated using the following equations:
(6)
(7)
where Q is the inserted charge density, computed by integrating the driving current density and Tc provided in Figure 3b. A graph plotted with optical density and charge density (Figure 3c) and coloration efficiency calculated as the slope of the curve. The calculated coloration efficiency is 96.96 cm2 C−1 which is comparatively better than other reported results shown in Table 2. Furthermore, Choi, Kim, and Lee [20] proposed a dynamic smart window based on WO3 powder spray deposition, demonstrating a coloration efficiency of 37 cm2 C−1. Additionally, Sun et al. [21] prepared a dual-band smart window consisting of amorphous-crystalline Ti-doped WO3–2H2O, showing a transmittance modulation of 83.8% at 633 nm with a coloration efficiency of 22.8 cm2 C−1. In the context of recent progress on WO3-based electrochromic windows for sustainable building design, it is crucial to develop a methodology to grow WO3-based electrochromic devices at room temperature. This ensures higher coloration efficiency with stable and durable electrochromic performance.
Reversibility is another key parameter and is calculated using the equation as follows:
(8)
where Qi is the intercalated charge amount and Qdi is the de-intercalated charge amount for the active layer. The calculated reversibility is 88.1%, which means its reversibility is quite good [22]. For high reversibility rates in electrochromic windows, the electrochromic material should possess greater uniformity. WO3 films grown by powder coating and chemical precipitation methods possess complex structures, providing coloration efficiencies of 22–37 cm2 C−1 [20, 21]. With uniform thin films, a greater reversibility rate can be achieved through higher optical density and charge density for the coloration and bleaching states. In this context, WO3 thin film preparation by reactive sputtering provides uniform and dense film formation, leading to a higher reversibility rate.

For response time analysis, a square wave potential of −3 and 1 V was applied to the working electrode in the electrolyte using the chronoamperometry technique. In situ transmittance measurements at 550 nm wavelength are done using kinetic mode. Figure 3d depicts the response time for the transparency variation with a coloration time of 10 s and a bleaching time of 24 s. This response speed is faster than previously reported works using concentrated and highly reactive electrolytes (Table 2).

The intercalation of ions into the WO₃ lattice is responsible for the electrochromic spectral change. This process occurs due to ionic transportation under applied bias, leading to electrochromic performance. In this case, intercalation is faster than de-intercalation. We applied a higher potential (3 V) for coloration, while a lower potential (1 V) was used for bleaching. Additionally, the higher concentration of H+ ions in the electrolyte solution enhances spontaneous interaction with the WO3 lattice, facilitating faster coloration. Conversely, the reverse process may take more time for ions to diffuse back into the electrolyte. Another possible reason is that the H+ ions intercalated into the lattice may bond to the electrochromic material, altering its structure. This could slow down the extraction of ions from the material.

3.5. Working Mechanism of Electrochromic WO3 Thin Film

The electrochromic mechanism of WO3, based on protonation and deprotonation, is illustrated in Figure 4a. When a negative voltage is applied to the FTO electrode, ions intercalate into the WO3 film, causing the coloration effect. Reversing the voltage extracts the ions back into the electrolyte, which serves as ion storage. The current switching behavior between these oxidized and reduced states can be determined through CV. The electrochemical reaction that results in the chromic response of WO3 can be described by considering the injection of a quantity (x) of positive ions (M+) and an equal amount of electrons (e). Symbolically, this reaction can be represented by the Faughnan model as follows [23]:
(9)
Details are in the caption following the image
(a) Schematic illustration of working mechanism of the electrochromic device, (b) cross-sectional SEM image of colored condition of working electrode, (c) EDX mapping in the colored state, (d) experimental setup showing color changing, (e) diffusion-controlled transition current density profile for various peak current densities. Inset summarizes the initial color states of the WO3 samples from –1.75 to –2.50 V and bleach states after diffusion (at 0 V) for 60 s, (f) chronocoulogram plot obtained by integration of the chronoamperometry and (g) electrochemically stimulated conformational relaxation model. EDX, energy-dispersive X-ray.
Details are in the caption following the image
(a) Schematic illustration of working mechanism of the electrochromic device, (b) cross-sectional SEM image of colored condition of working electrode, (c) EDX mapping in the colored state, (d) experimental setup showing color changing, (e) diffusion-controlled transition current density profile for various peak current densities. Inset summarizes the initial color states of the WO3 samples from –1.75 to –2.50 V and bleach states after diffusion (at 0 V) for 60 s, (f) chronocoulogram plot obtained by integration of the chronoamperometry and (g) electrochemically stimulated conformational relaxation model. EDX, energy-dispersive X-ray.
Details are in the caption following the image
(a) Schematic illustration of working mechanism of the electrochromic device, (b) cross-sectional SEM image of colored condition of working electrode, (c) EDX mapping in the colored state, (d) experimental setup showing color changing, (e) diffusion-controlled transition current density profile for various peak current densities. Inset summarizes the initial color states of the WO3 samples from –1.75 to –2.50 V and bleach states after diffusion (at 0 V) for 60 s, (f) chronocoulogram plot obtained by integration of the chronoamperometry and (g) electrochemically stimulated conformational relaxation model. EDX, energy-dispersive X-ray.
Details are in the caption following the image
(a) Schematic illustration of working mechanism of the electrochromic device, (b) cross-sectional SEM image of colored condition of working electrode, (c) EDX mapping in the colored state, (d) experimental setup showing color changing, (e) diffusion-controlled transition current density profile for various peak current densities. Inset summarizes the initial color states of the WO3 samples from –1.75 to –2.50 V and bleach states after diffusion (at 0 V) for 60 s, (f) chronocoulogram plot obtained by integration of the chronoamperometry and (g) electrochemically stimulated conformational relaxation model. EDX, energy-dispersive X-ray.
Details are in the caption following the image
(a) Schematic illustration of working mechanism of the electrochromic device, (b) cross-sectional SEM image of colored condition of working electrode, (c) EDX mapping in the colored state, (d) experimental setup showing color changing, (e) diffusion-controlled transition current density profile for various peak current densities. Inset summarizes the initial color states of the WO3 samples from –1.75 to –2.50 V and bleach states after diffusion (at 0 V) for 60 s, (f) chronocoulogram plot obtained by integration of the chronoamperometry and (g) electrochemically stimulated conformational relaxation model. EDX, energy-dispersive X-ray.
Details are in the caption following the image
(a) Schematic illustration of working mechanism of the electrochromic device, (b) cross-sectional SEM image of colored condition of working electrode, (c) EDX mapping in the colored state, (d) experimental setup showing color changing, (e) diffusion-controlled transition current density profile for various peak current densities. Inset summarizes the initial color states of the WO3 samples from –1.75 to –2.50 V and bleach states after diffusion (at 0 V) for 60 s, (f) chronocoulogram plot obtained by integration of the chronoamperometry and (g) electrochemically stimulated conformational relaxation model. EDX, energy-dispersive X-ray.
Details are in the caption following the image
(a) Schematic illustration of working mechanism of the electrochromic device, (b) cross-sectional SEM image of colored condition of working electrode, (c) EDX mapping in the colored state, (d) experimental setup showing color changing, (e) diffusion-controlled transition current density profile for various peak current densities. Inset summarizes the initial color states of the WO3 samples from –1.75 to –2.50 V and bleach states after diffusion (at 0 V) for 60 s, (f) chronocoulogram plot obtained by integration of the chronoamperometry and (g) electrochemically stimulated conformational relaxation model. EDX, energy-dispersive X-ray.

(Transparent) (bias applied) (translucent/opaque).

Here, M+ = H+ ions, and the quantity x becomes the stoichiometric parameter of the product and can vary between 0 and 1. Typically, WO3 films consist of W6+ and W4+ states. During the intercalation of ions, W6+ states reduce to W5+. The optical absorption in the colored film is caused by the transition between different tungsten oxidation states [24].

The pristine WO3 film is highly transparent in the visible spectrum. As confirmed by optical characteristics, the reactive sputtering-grown WO3 film possesses an optical bandgap value of 2.64 eV. This optical bandgap, along with the stoichiometric film preparation, provides WO3 with higher transmittance in the visible and IR wavelength regions. During electrochromic operation, protonation occurs in the coloration states, inducing intraband energy levels that lead to the absorption of visible and IR wavelengths. In the bleaching state, as H+ ions diffuse back into the electrolyte from the WO3 film, the film resumes its highly transparent state. The highly reversible operation of H+ ion diffusion during coloration and bleaching states allows for tunable transmittance states through electrochromic operation.

Figure 4b,c shows a cross-sectional SEM image and the elemental distribution of tungsten, oxygen, and tin in the colored state, respectively, confirming no change in thickness but a variation in the elemental distribution due to H+ intercalation. Additionally, the stoichiometric fraction shifted, computed using the EDX mapping (Supporting Information 1: Figure S3). Before and after coloring, the O:W ratio increased from 2.90 to 2.92 by atomic percentage (O = 74.5 and W = 25.5). It emphasizes the electrochromic behaviors underlying oxidation state variation speculation. Figure 4d illustrates the experimental setup for the coloration of WO3 in HCl. The active area of WO3 is 1 cm2, and the bleached and colored states are shown. Supporting Information 2: Video S1 demonstrates the coloring and decoloring (Supporting information 2: Video S1).

Diffusion coefficients indeed provide valuable insights into the coloration and bleaching states and can be estimated using the Cottrell equation and the electrochemically stimulated conformation relaxation (ESCR) model [25, 26]. We designed four color states for the WO₃ electrochromic device, including protonation at −1.75, −2, −2.25, and −2.5 V, which provide various concentrations of H+ ions. Under short-circuit conditions, these ions diffuse to the electrolyte, generating a diffusion current. Figure 4e shows the diffusion-controlled transition current density profiles of the WO3 device, confirming the current decay due to the diffusion of H+ ions. According to the ESCR model for chronoamperometry, the total charge (Qt) diffused to bleach a film and the charge (Q) diffused at each time (t) after the potential step are related by the following expression:
(10)
where the diffusion coefficient (D) from the electrochromic material toward the bleaching front is included in the constant b:
(11)
where h is the thickness of the WO3 film.

Figure 4f summarizes the charge versus time profile of various colored WO3 electrodes from the transient current profiles. The constant b can be estimated from the plot of ln (1 − (Q/Qt)) versus t, as shown in Figure 4g. According to this analysis, we estimated b values of 0.2714 and 0.2976 for WO3 devices protonated at −1.7 and −2.5 V, respectively. The calculated diffusion coefficient values for WO3 devices range from 3.72 × 10⁻10 cm2 s⁻1 to 3.30 × 10⁻10 cm2 s⁻1, which are comparable to Li-doped WO3 devices [27] and iridium oxide-based thin films [28], and significantly faster than solid-state electrochromic devices [25].

3.6. Stability and Durability of Electrochromic WO3 Device

To assess the stability of the WO electrochromic device, we conducted CV tests, measuring the current during coloration and bleaching cycles by sweeping the potential from 1 to −2.5 V at 200 mV s⁻1. Over 1000 cycles, the device maintained consistent current density–voltage characteristics, as shown in Figure 5a–e. The current density for the first coloration state was −2.7 mA cm⁻2 at −2 V vs. Pt, remaining around −3.2 mA cm⁻2 after 1000 cycles. For bleaching cycles, the current density ranged from 2 to 2.9 mA cm⁻2, demonstrating outstanding stability, as summarized in Figure 5f.

Details are in the caption following the image
Stability and durability test of the WO3 electrochromic device. Cyclic voltammetry of device operation for various cycle ranges: (a) 1–200, (b) 201–400, (c) 401–600, (d) 601–800, and (e) 801–1000 cycles. Insets show photographs of the device in coloration and bleaching states. (f) Current density vs. cycle number for bleaching (0 V vs. Pt) and coloration (−2 V vs. Pt) states. Cyclic voltammetry of device operation at various temperatures: (g) 5°C, (h) 10°C, (i) 25°C, (j) 35°C, and (k) 50°C. Insets display photographs of the device in coloration and bleaching states. (l) Current density vs. operating temperature for bleaching (0 V vs. Pt) and coloration (−2 V vs. Pt) states.
Details are in the caption following the image
Stability and durability test of the WO3 electrochromic device. Cyclic voltammetry of device operation for various cycle ranges: (a) 1–200, (b) 201–400, (c) 401–600, (d) 601–800, and (e) 801–1000 cycles. Insets show photographs of the device in coloration and bleaching states. (f) Current density vs. cycle number for bleaching (0 V vs. Pt) and coloration (−2 V vs. Pt) states. Cyclic voltammetry of device operation at various temperatures: (g) 5°C, (h) 10°C, (i) 25°C, (j) 35°C, and (k) 50°C. Insets display photographs of the device in coloration and bleaching states. (l) Current density vs. operating temperature for bleaching (0 V vs. Pt) and coloration (−2 V vs. Pt) states.
Details are in the caption following the image
Stability and durability test of the WO3 electrochromic device. Cyclic voltammetry of device operation for various cycle ranges: (a) 1–200, (b) 201–400, (c) 401–600, (d) 601–800, and (e) 801–1000 cycles. Insets show photographs of the device in coloration and bleaching states. (f) Current density vs. cycle number for bleaching (0 V vs. Pt) and coloration (−2 V vs. Pt) states. Cyclic voltammetry of device operation at various temperatures: (g) 5°C, (h) 10°C, (i) 25°C, (j) 35°C, and (k) 50°C. Insets display photographs of the device in coloration and bleaching states. (l) Current density vs. operating temperature for bleaching (0 V vs. Pt) and coloration (−2 V vs. Pt) states.
Details are in the caption following the image
Stability and durability test of the WO3 electrochromic device. Cyclic voltammetry of device operation for various cycle ranges: (a) 1–200, (b) 201–400, (c) 401–600, (d) 601–800, and (e) 801–1000 cycles. Insets show photographs of the device in coloration and bleaching states. (f) Current density vs. cycle number for bleaching (0 V vs. Pt) and coloration (−2 V vs. Pt) states. Cyclic voltammetry of device operation at various temperatures: (g) 5°C, (h) 10°C, (i) 25°C, (j) 35°C, and (k) 50°C. Insets display photographs of the device in coloration and bleaching states. (l) Current density vs. operating temperature for bleaching (0 V vs. Pt) and coloration (−2 V vs. Pt) states.
Details are in the caption following the image
Stability and durability test of the WO3 electrochromic device. Cyclic voltammetry of device operation for various cycle ranges: (a) 1–200, (b) 201–400, (c) 401–600, (d) 601–800, and (e) 801–1000 cycles. Insets show photographs of the device in coloration and bleaching states. (f) Current density vs. cycle number for bleaching (0 V vs. Pt) and coloration (−2 V vs. Pt) states. Cyclic voltammetry of device operation at various temperatures: (g) 5°C, (h) 10°C, (i) 25°C, (j) 35°C, and (k) 50°C. Insets display photographs of the device in coloration and bleaching states. (l) Current density vs. operating temperature for bleaching (0 V vs. Pt) and coloration (−2 V vs. Pt) states.
Details are in the caption following the image
Stability and durability test of the WO3 electrochromic device. Cyclic voltammetry of device operation for various cycle ranges: (a) 1–200, (b) 201–400, (c) 401–600, (d) 601–800, and (e) 801–1000 cycles. Insets show photographs of the device in coloration and bleaching states. (f) Current density vs. cycle number for bleaching (0 V vs. Pt) and coloration (−2 V vs. Pt) states. Cyclic voltammetry of device operation at various temperatures: (g) 5°C, (h) 10°C, (i) 25°C, (j) 35°C, and (k) 50°C. Insets display photographs of the device in coloration and bleaching states. (l) Current density vs. operating temperature for bleaching (0 V vs. Pt) and coloration (−2 V vs. Pt) states.
Details are in the caption following the image
Stability and durability test of the WO3 electrochromic device. Cyclic voltammetry of device operation for various cycle ranges: (a) 1–200, (b) 201–400, (c) 401–600, (d) 601–800, and (e) 801–1000 cycles. Insets show photographs of the device in coloration and bleaching states. (f) Current density vs. cycle number for bleaching (0 V vs. Pt) and coloration (−2 V vs. Pt) states. Cyclic voltammetry of device operation at various temperatures: (g) 5°C, (h) 10°C, (i) 25°C, (j) 35°C, and (k) 50°C. Insets display photographs of the device in coloration and bleaching states. (l) Current density vs. operating temperature for bleaching (0 V vs. Pt) and coloration (−2 V vs. Pt) states.
Details are in the caption following the image
Stability and durability test of the WO3 electrochromic device. Cyclic voltammetry of device operation for various cycle ranges: (a) 1–200, (b) 201–400, (c) 401–600, (d) 601–800, and (e) 801–1000 cycles. Insets show photographs of the device in coloration and bleaching states. (f) Current density vs. cycle number for bleaching (0 V vs. Pt) and coloration (−2 V vs. Pt) states. Cyclic voltammetry of device operation at various temperatures: (g) 5°C, (h) 10°C, (i) 25°C, (j) 35°C, and (k) 50°C. Insets display photographs of the device in coloration and bleaching states. (l) Current density vs. operating temperature for bleaching (0 V vs. Pt) and coloration (−2 V vs. Pt) states.
Details are in the caption following the image
Stability and durability test of the WO3 electrochromic device. Cyclic voltammetry of device operation for various cycle ranges: (a) 1–200, (b) 201–400, (c) 401–600, (d) 601–800, and (e) 801–1000 cycles. Insets show photographs of the device in coloration and bleaching states. (f) Current density vs. cycle number for bleaching (0 V vs. Pt) and coloration (−2 V vs. Pt) states. Cyclic voltammetry of device operation at various temperatures: (g) 5°C, (h) 10°C, (i) 25°C, (j) 35°C, and (k) 50°C. Insets display photographs of the device in coloration and bleaching states. (l) Current density vs. operating temperature for bleaching (0 V vs. Pt) and coloration (−2 V vs. Pt) states.
Details are in the caption following the image
Stability and durability test of the WO3 electrochromic device. Cyclic voltammetry of device operation for various cycle ranges: (a) 1–200, (b) 201–400, (c) 401–600, (d) 601–800, and (e) 801–1000 cycles. Insets show photographs of the device in coloration and bleaching states. (f) Current density vs. cycle number for bleaching (0 V vs. Pt) and coloration (−2 V vs. Pt) states. Cyclic voltammetry of device operation at various temperatures: (g) 5°C, (h) 10°C, (i) 25°C, (j) 35°C, and (k) 50°C. Insets display photographs of the device in coloration and bleaching states. (l) Current density vs. operating temperature for bleaching (0 V vs. Pt) and coloration (−2 V vs. Pt) states.
Details are in the caption following the image
Stability and durability test of the WO3 electrochromic device. Cyclic voltammetry of device operation for various cycle ranges: (a) 1–200, (b) 201–400, (c) 401–600, (d) 601–800, and (e) 801–1000 cycles. Insets show photographs of the device in coloration and bleaching states. (f) Current density vs. cycle number for bleaching (0 V vs. Pt) and coloration (−2 V vs. Pt) states. Cyclic voltammetry of device operation at various temperatures: (g) 5°C, (h) 10°C, (i) 25°C, (j) 35°C, and (k) 50°C. Insets display photographs of the device in coloration and bleaching states. (l) Current density vs. operating temperature for bleaching (0 V vs. Pt) and coloration (−2 V vs. Pt) states.
Details are in the caption following the image
Stability and durability test of the WO3 electrochromic device. Cyclic voltammetry of device operation for various cycle ranges: (a) 1–200, (b) 201–400, (c) 401–600, (d) 601–800, and (e) 801–1000 cycles. Insets show photographs of the device in coloration and bleaching states. (f) Current density vs. cycle number for bleaching (0 V vs. Pt) and coloration (−2 V vs. Pt) states. Cyclic voltammetry of device operation at various temperatures: (g) 5°C, (h) 10°C, (i) 25°C, (j) 35°C, and (k) 50°C. Insets display photographs of the device in coloration and bleaching states. (l) Current density vs. operating temperature for bleaching (0 V vs. Pt) and coloration (−2 V vs. Pt) states.

Thin films grown by reactive sputtering methods achieve a dense nature due to the higher kinetic energy from ionized argon and oxygen species [11], hydrothermal, sol–gel, spray, hot injection, or doctor blade methods which require additional thermal processing. Reactive sputtering enables WO thin film growth at room temperature, exhibiting exceptional stability.

Environmental stability is a critical factor in developing real-world applications for electrochromic devices, especially for use in houses and vehicles [29]. To validate the durability of the WO3 electrochromic device, we integrated a Peltier module to facilitate testing of electrochromic cycles across a working temperature range from 0 to 50°C. For this examination, we performed CV with a total of 50 coloration and bleaching cycles. The temperature of the setup and device was monitored using a thermal camera, while the temperature was controlled by regulating the power supplied to the Peltier module.

Figure 5g–k presents the CV (I–V) plots of the WO3 electrochromic device across the temperature range from 5 to 50°C. The results demonstrate consistent coloration and bleaching states throughout the operational temperature range, making it suitable for domestic applications. As the device temperature increases, ionic conductivity also increases [30], leading to a corresponding rise in current density for both coloration and bleaching states.

Figure 5l illustrates the current density as a function of the operating temperature of the WO3 electrochromic device. We observed that the current density value corresponding to the coloration states (−2 V vs. Pt) was −3 mA cm⁻2 at 0°C, which increased to −4.27 mA cm⁻2 at an operating temperature of 50°C. Similarly, the current density corresponding to the bleaching state (0 V vs. Pt) was 2.3 mA cm⁻2 at 0°C, increasing to 2.8 mA cm⁻2 at an operating temperature of 50°C. This performance by the WO3 electrochromic device across a broad range of operating temperatures underscores its durability, which is essential for reliability in real-world applications.

In order to compare the performance of solid-state WO3 electrochromic performances, the features of WO3 are summarized in Table 2 [3142]. Most previous works employed Li+ electrolytes in concentrated form, whereas the solid-state WO3 can be operated in the diluted HCl environment free from Li dependency, which is less environmentally harmful. H+ ions, being the smallest, enable faster and more efficient coloration. Additionally, unlike other studies that involve high-temperature processes, the solid-state WO3 method requires no heat treatment, allowing for a wider range of substrates, including flexible ones like PET. Furthermore, the comparison of our WO-based electrochromic device with other electrochromic materials, including Ti-doped WO3, PANI, TiO2-x, Nb12O29, Nd-doped TiO2, and NiO summarize stability cycles and operational temperature in Table 2, highlights the unique strengths of our WO3 film, developed by reactive sputtering at room temperature, indicating an efficient, fast, and durable electrochromic device. This suggests that higher possibility to deploy electrochromic windows for versatile applications with suitable processes.

4. Conclusion

This study focuses on developing a high-quality, transparent WO3 electrochromic thin film at room temperature. The electrochromic properties of the WO3 film were thoroughly investigated. In a 0.01 M HCl electrolyte, the film demonstrated a coloration efficiency of 96.96 cm2 C−1, exceeding previously reported results. The optical modulation in the visible wavelength range was 68.5%, and the film effectively blocked UV and IR radiation. Furthermore, the film exhibited rapid coloration and bleaching response times, with reversibility exceeding 88%. The solid-phase reactive sputtered WO3 film can be used as a smart electrochromic window, regulating indoor solar light by blocking UV and IR radiation while allowing visible light transmission. This technology could be integrated with transparent photovoltaics to enhance radiation absorption, leading to improved power generation and passive energy conservation.

Conflicts of Interest

The authors declare no conflicts of interest.

Author Contributions

Malkeshkumar Patel, Manutious, and Shuvaraj Ghosh contributed equally to this work.

Funding

This work received financial support from the National Research Foundation of Korea (NRF) grant funded by the Korea Government by the Ministry of Science and ICT (MSIT) (RS-2024-0034883), the Brain Pool Program (RS-2023-00283263), and Basic Science Research Program through the National Research Foundation (NRF-2022R1I1A1A01054397).

Acknowledgments

The authors acknowledge the financial support of National Research Foundation of Korea (NRF) grant funded by the Korea Government by the Ministry of Science and ICT (MSIT) (RS-2024-0034883), Brain Pool Program (RS-2023-00283263), and Basic Science Research Program through the National Research Foundation (NRF-2022R1I1A1A01054397).

    Supporting Information

    Additional supporting information can be found online in the Supporting Information section.

    Data Availability Statement

    The data that support the findings of this study are available from the corresponding author upon reasonable request.

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