Volume 2006, Issue 1 025467

Research Article

Open Access

Study on the Effect of Nano-SiO2 in ULSI Silicon Substrate Chemical Mechanical Polishing Process

Liu Yuling,

Liu Yuling

Institute of Microelectronic Technique and Material, Hebei University of Technology, Tianjin 300130, China

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Wang Juan,

Wang Juan

Institute of Microelectronic Technique and Material, Hebei University of Technology, Tianjin 300130, China

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Sun Ming,

Sun Ming

Institute of Microelectronic Technique and Material, Hebei University of Technology, Tianjin 300130, China

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Liu Chenglin,

Liu Chenglin

Institute of Microelectronic Technique and Material, Hebei University of Technology, Tianjin 300130, China

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Liu Yuling,

Liu Yuling

Institute of Microelectronic Technique and Material, Hebei University of Technology, Tianjin 300130, China

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Wang Juan,

Wang Juan

Institute of Microelectronic Technique and Material, Hebei University of Technology, Tianjin 300130, China

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Sun Ming,

Sun Ming

Institute of Microelectronic Technique and Material, Hebei University of Technology, Tianjin 300130, China

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Liu Chenglin,

Liu Chenglin

Institute of Microelectronic Technique and Material, Hebei University of Technology, Tianjin 300130, China

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First published: 17 January 2007

https://doi.org/10.1155/JNM/2006/25467

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Abstract

Both process and mechanical of silicon substrate chemical mechanical polishing (CMP) are studied in detail, and the effects of experiments designed indicate that nano-SiO₂ grinding particles seem to be acted as catalyzer besides the grinding action during the CMP process. This is different from the traditional function. As a result, in the condition of low pH, the nano-SiO₂ slurry can be recycled. In the meanwhile, the removal rate can gain stability and pH value does not change obviously.

References

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Study on the Effect of Nano-SiO2 in ULSI Silicon Substrate Chemical Mechanical Polishing Process

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