Volume 2015, Issue 1 382814
Research Article
Open Access

Optimization of μc-Si1−xGex:H Single-Junction Solar Cells with Enhanced Spectral Response and Improved Film Quality

Yen-Tang Huang

Corresponding Author

Yen-Tang Huang

Department of Photonics, National Chiao Tung University, 1001 University Road, Hsinchu 300, Taiwan nctu.edu.tw

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Pei-Ling Chen

Pei-Ling Chen

Department of Photonics, National Chiao Tung University, 1001 University Road, Hsinchu 300, Taiwan nctu.edu.tw

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Po-Wei Chen

Po-Wei Chen

Department of Photonics, National Chiao Tung University, 1001 University Road, Hsinchu 300, Taiwan nctu.edu.tw

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Hung-Jung Hsu

Hung-Jung Hsu

Department of Photonics, National Chiao Tung University, 1001 University Road, Hsinchu 300, Taiwan nctu.edu.tw

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Cheng-Hang Hsu

Cheng-Hang Hsu

Department of Photonics, National Chiao Tung University, 1001 University Road, Hsinchu 300, Taiwan nctu.edu.tw

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Chuang-Chuang Tsai

Chuang-Chuang Tsai

Department of Photonics, National Chiao Tung University, 1001 University Road, Hsinchu 300, Taiwan nctu.edu.tw

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First published: 24 June 2015
Academic Editor: Jürgen Hüpkes

Abstract

Effects of RF power on optical, electrical, and structural properties of μc-Si1−xGex:H films was reported. Raman and FTIR spectra from μc-Si1−xGex:H films reflected the variation in microstructure and bonding configuration. Unlike increasing the germane concentration for Ge incorporation, low RF power enhanced Ge incorporation efficiency in μc-Si1−xGex:H alloy. By decreasing RF power from 100 to 50 W at a fixed reactant gas ratio, the optical bandgap of μc-Si1−xGex:H was reduced owing to the increase in Ge content from 11.2 to 23.8 at.%, while Ge-related defects and amorphous phase were increased. Consequently, photo conductivity of 1.62 × 10−5 S/cm was obtained for the μc-Si1−xGex:H film deposited at 60 W. By applying 0.9 μm thick μc-Si1−xGex:H absorber with XC of 48% and [Ge] of 16.4 at.% in the single-junction cell, efficiency of 6.18% was obtained. The long-wavelength response of μc-Si1−xGex:H cell was significantly enhanced compared with the μc-Si:H cell. In the case of tandem cells, 0.24 μm a-Si:H/0.9 μm μc-Si1−xGex:H tandem cell exhibited a comparable spectral response as 0.24 μm a-Si:H/1.4 μm μc-Si:H tandem cell and achieved an efficiency of 9.44%.

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