Volume 13, Issue 1-4 082542 pp. 85-90
Article
Open Access

Langevin Forces and Generalized Transfer Fields for Noise Modelling in Deep Submicron Devices

P. Shiktorov

P. Shiktorov

Semiconductor Physics Institute Vilnius, Lithuania , pfi.lt

Semiconductor Physics Institute Goshtauto 11 Vilnius 2600, Lithuania , pfi.lt

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E. Starikov

E. Starikov

Semiconductor Physics Institute Vilnius, Lithuania , pfi.lt

Université Montpellier II Montpellier Cedex 5 34095, France , univ-montp2.fr

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V. Gruzinskis

V. Gruzinskis

Semiconductor Physics Institute Vilnius, Lithuania , pfi.lt

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T. GonzáLez

T. GonzáLez

Universidad de Salamanca Salamanca, Spain , usal.es

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J. Mateos

J. Mateos

Universidad de Salamanca Salamanca, Spain , usal.es

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D. Pardo

D. Pardo

Universidad de Salamanca Salamanca, Spain , usal.es

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L. Reggiani

L. Reggiani

Università di Lecce Lecce, Italy , unile.it

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L. Varani

Corresponding Author

L. Varani

Université Montpellier II Montpellier Cedex 5 34095, France , univ-montp2.fr

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J. C. Vaissiére

J. C. Vaissiére

Université Montpellier II Montpellier Cedex 5 34095, France , univ-montp2.fr

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First published: 01 January 2001

Abstract

We present a generalized transfer field method with the microscopic noise sources directly connected with the velocity and energy change during single scattering events. The advantages of this method are illustrated by hydrodynamic calculations of current and voltage noise spectra in several two-terminal submicron structures.

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