Volume 6, Issue 7 2200091
Research Article

Coevaporation of Doped Inorganic Carrier-Selective Layers for High-Performance Inverted Planar Perovskite Solar Cells

Jiexuan Jiang

Jiexuan Jiang

Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054 China

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Andraž Mavrič

Andraž Mavrič

Materials Research Laboratory, University of Nova Gorica, SI-5000 Nova Gorica, Slovenia

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Nadiia Pastukhova

Nadiia Pastukhova

Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054 China

Materials Research Laboratory, University of Nova Gorica, SI-5000 Nova Gorica, Slovenia

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Matjaz Valant

Matjaz Valant

Materials Research Laboratory, University of Nova Gorica, SI-5000 Nova Gorica, Slovenia

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Qiugui Zeng

Qiugui Zeng

Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054 China

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Zeyu Fan

Zeyu Fan

Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054 China

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Beibei Zhang

Beibei Zhang

Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054 China

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Yanbo Li

Corresponding Author

Yanbo Li

Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054 China

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First published: 16 March 2022
Citations: 5

Abstract

Inorganic carrier-selective layers (CSLs), whose conductivity can be effectively tuned by doping, offer low-cost and stable alternatives for their organic counterparts in perovskite solar cells (PSCs). Herein, a dual-source electron-beam co-evaporation method for the controlled deposition of copper-doped nickel oxide (Cu:NiO) and tungsten-doped niobium oxide (W:Nb2O5) as hole and electron transport layers, respectively, is used. The mechanisms for the improved conductivity using dopants are investigated. Owing to the improved conductivity and optimized band alignment of the doped CSLs, the all-inorganic-CSLs-based PSCs achieve a maximum power conversion efficiency (PCE) of 20.47%. Furthermore, a thin titanium buffer layer is inserted between W:Nb2O5 and the silver electrode to prevent halide ingression and improve band alignment. This leads to a further improvement of PCE to 21.32% and long-term stability (1200 h) after encapsulation. Finally, the large-scale applicability of the doped CSLs by coevaporation is demonstrated for the device with 1 cm2 area showing a PCE of over 19%. The results demonstrate the potential application of the coevaporated CSLs with controlled doping in PSCs for commercialization.

Conflict of Interest

The authors declare no conflict of interest.

Data Availability Statement

The data that support the findings of this study are available from the corresponding author upon reasonable request.

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