Volume 5, Issue 6 2001090
Communication

2D-MA3Sb2I9 Back Surface Field for Efficient and Stable Perovskite Solar Cells

Haobo Yuan

Haobo Yuan

Department of Microelectronic Science and Engineering, Ningbo University, Zhejiang, 315211 China

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Jing Zhang

Corresponding Author

Jing Zhang

Department of Microelectronic Science and Engineering, Ningbo University, Zhejiang, 315211 China

E-mail: [email protected]; [email protected]; [email protected]

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Luting Yu

Luting Yu

Department of Microelectronic Science and Engineering, Ningbo University, Zhejiang, 315211 China

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Tonghui Guo

Tonghui Guo

Department of Microelectronic Science and Engineering, Ningbo University, Zhejiang, 315211 China

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Zequn Zhang

Zequn Zhang

Department of Microelectronic Science and Engineering, Ningbo University, Zhejiang, 315211 China

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Yanyan Wang

Yanyan Wang

Department of Microelectronic Science and Engineering, Ningbo University, Zhejiang, 315211 China

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Minghui Shang

Minghui Shang

School of Materials Science and Engineering, Ningbo University of Technology, Zhejiang, 315016 China

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Xiaohui Liu

Xiaohui Liu

Department of Microelectronic Science and Engineering, Ningbo University, Zhejiang, 315211 China

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Ziyang Hu

Ziyang Hu

Department of Microelectronic Science and Engineering, Ningbo University, Zhejiang, 315211 China

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Yuejin Zhu

Corresponding Author

Yuejin Zhu

Department of Microelectronic Science and Engineering, Ningbo University, Zhejiang, 315211 China

E-mail: [email protected]; [email protected]; [email protected]

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Liyuan Han

Corresponding Author

Liyuan Han

State Key Laboratory of Metal Matrix Composites, Shanghai Jiao Tong University, 800 Dong Chuan Road, Shanghai, 200240 China

E-mail: [email protected]; [email protected]; [email protected]

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First published: 28 April 2021
Citations: 8

Abstract

In perovskite solar cells (PSCs), a defective perovskite (PVK) surface and cliff-like energy offset at the interface always slow down the charge extraction; meanwhile, interface ion diffusion causes oxidation of the metal electrode, inducing device instability. Here, the in situ grown 2D-(CH3NH2)3Sb2I9 (MA3Sb2I9) on the back surface of MAPbI3 results in a more robust interface. MA3Sb2I9 changes the MAPbI3 surface to p-type and thus acts like a back surface field to drive charge extraction and suppress recombination, resulting in an obviously higher fill factor (FF) = 0.8 and power conversion efficiency (PCE) = 20.4% of SnO2/MAPbI3/MA3Sb2I9/Spiro-OMeTAD (2,2′,7,7′-Tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9′-spirobifluorene) PSC than the pure MAPbI3 device. More importantly, strong chemical bonding of SbI prohibits ion diffusion, largely enhancing the thermal stability and longtime stability. Here, special 2D-MA3Sb2I9 constructs’ robust band alignment and chemical environment at the interface are highlighted for efficient and stable PSCs.

Conflict of Interest

The authors declare no conflict of interest.

Data Availability Statement

The data that support the findings of this study are available from the corresponding authors upon reasonable request.

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