Phase Coexistence Induced Giant Dielectric Tunability and Electromechanical Response in PbZrO3 Epitaxial Thin Films
Wanli Zhang
State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084 China
Key Laboratory of Micro Nano Optoelectronic Devices and Intelligent Perception Systems, Yangtze Normal University, Chongqing, 408100 China
Search for more papers by this authorXinpeng Mou
Key Laboratory of Key Film Materials & Application for Equipment (Hunan Province), School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan, 411105 China
Search for more papers by this authorYunpeng Ma
State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084 China
Search for more papers by this authorYi Zheng
State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084 China
Search for more papers by this authorSixu Wang
State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084 China
Search for more papers by this authorLiang Shu
State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084 China
Search for more papers by this authorZiwan Du
State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084 China
Search for more papers by this authorChenguang Deng
State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084 China
Search for more papers by this authorCorresponding Author
Qiong Yang
Key Laboratory of Key Film Materials & Application for Equipment (Hunan Province), School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan, 411105 China
E-mail: [email protected]; [email protected]; [email protected]; [email protected]
Search for more papers by this authorCorresponding Author
Rong Yu
State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084 China
E-mail: [email protected]; [email protected]; [email protected]; [email protected]
Search for more papers by this authorCorresponding Author
Jing-Feng Li
State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084 China
E-mail: [email protected]; [email protected]; [email protected]; [email protected]
Search for more papers by this authorCorresponding Author
Qian Li
State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084 China
E-mail: [email protected]; [email protected]; [email protected]; [email protected]
Search for more papers by this authorWanli Zhang
State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084 China
Key Laboratory of Micro Nano Optoelectronic Devices and Intelligent Perception Systems, Yangtze Normal University, Chongqing, 408100 China
Search for more papers by this authorXinpeng Mou
Key Laboratory of Key Film Materials & Application for Equipment (Hunan Province), School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan, 411105 China
Search for more papers by this authorYunpeng Ma
State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084 China
Search for more papers by this authorYi Zheng
State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084 China
Search for more papers by this authorSixu Wang
State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084 China
Search for more papers by this authorLiang Shu
State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084 China
Search for more papers by this authorZiwan Du
State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084 China
Search for more papers by this authorChenguang Deng
State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084 China
Search for more papers by this authorCorresponding Author
Qiong Yang
Key Laboratory of Key Film Materials & Application for Equipment (Hunan Province), School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan, 411105 China
E-mail: [email protected]; [email protected]; [email protected]; [email protected]
Search for more papers by this authorCorresponding Author
Rong Yu
State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084 China
E-mail: [email protected]; [email protected]; [email protected]; [email protected]
Search for more papers by this authorCorresponding Author
Jing-Feng Li
State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084 China
E-mail: [email protected]; [email protected]; [email protected]; [email protected]
Search for more papers by this authorCorresponding Author
Qian Li
State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084 China
E-mail: [email protected]; [email protected]; [email protected]; [email protected]
Search for more papers by this authorAbstract
PbZrO3 (PZO) thin films, as a classic antiferroelectric material, have attracted tremendous attention for their excellent dielectric, electromechanical, and thermal switching performances. However, several fundamental questions remain unresolved, particularly the existence of an intermediate phase during the transition from the antiferroelectric (AFE) to ferroelectric (FE) state. Here, a phase coexistence configuration of an orthorhombic AFE phase and a tetragonal-like (T-like) phase is reported in epitaxial antiferroelectric PZO thin films, with thickness ranging from 16 to 110 nm. This configuration is evidenced both macroscopically by distinct shoulder-cape-shaped dielectric behavior and microscopically through scanning transmission electron microscopy (STEM) analysis. Remarkably, a 49 nm PZO film achieves an ultrahigh dielectric tunability of 90.1%, while a 59 nm film exhibits significant electromechanical strain of 0.66%. Microscopically, HAADF-STEM reveals the presence of the intermediate phase with a dipole arrangement of vertically diagonal up-up-down-down pattern, and first-principles calculations further confirm the role of this intermediate phase during AFE-to-FE phase transition, which is responsible for the unusual dielectric peaks of ɛr-E curves. These findings not only enhance the understanding of phase transition in antiferroelectric materials but also exhibit great potential for high-performance tunable and nano-electromechanical device applications.
Conflict of Interest
The authors declare no conflict of interest.
Open Research
Data Availability Statement
The data that support the findings of this study are available from the corresponding author upon reasonable request.
Supporting Information
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| smll202410260-sup-0001-SuppMat.docx27.6 MB | Supporting Information |
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