Volume 9, Issue 3-4 pp. 818-821
ICNS-9 – Contributed Article

The difference between reflectance and electroreflectance spectra of AlGaN/GaN/InGaN LED structures

Lev Avakyants

Lev Avakyants

M.V. Lomonosov Moscow State University, Faculty of Physics, Leninskie gory 1, bdg. 2, Moscow 119991, Russia

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Artem Aslanyan

Artem Aslanyan

M.V. Lomonosov Moscow State University, Faculty of Physics, Leninskie gory 1, bdg. 2, Moscow 119991, Russia

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Pavel Bokov

Corresponding Author

Pavel Bokov

M.V. Lomonosov Moscow State University, Faculty of Physics, Leninskie gory 1, bdg. 2, Moscow 119991, Russia

Phone: +7 495 939 2388, Fax: +7 495 939 1489Search for more papers by this author
Anatoly Chervyakov

Anatoly Chervyakov

M.V. Lomonosov Moscow State University, Faculty of Physics, Leninskie gory 1, bdg. 2, Moscow 119991, Russia

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Kirill Polozhentsev

Kirill Polozhentsev

M.V. Lomonosov Moscow State University, Faculty of Physics, Leninskie gory 1, bdg. 2, Moscow 119991, Russia

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First published: 29 November 2011
Citations: 3

Abstract

In recent works one could propose that the periodicity of the interference fringes in the reflectance and electroreflectance spectra is the same. Detailed study of the GaN based LEDs multilayered heterostructures by means of reflectance and electroreflectance spectroscopy show that this proposal is not correct. The possible explanation of such difference has been shown in this paper. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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