EMRS-F – Contributed Article
Growth and optical properties of gadolinium aluminum nitride thin films
Abstract
In this study, c-axis oriented AlN, GdxAl1-xN and AlN/Gd0.05Al0.95N films have been successfully grown on both Si(100) and quartz glass substrates by DC magnetron reactive sputtering method. The XRD patterns show that the crystal structure of the film has changed after doping Gd3+. The optical constants were obtained by ellipsometry measurements. The high extinction coefficient k in the deep UV range is just in agreement with the low transmittance in the range of 250-300 nm. The refractive index n increases as well with increasing Gd concentrations. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
