Volume 3, Issue 4 pp. 916-919
Original Paper

Influence of CdTe sub-monolayer stressor on CdSe quantum dot self-assembling in ZnSe

I. V. Sedova

Corresponding Author

I. V. Sedova

Ioffe Physico-Technical Institute, 26 Polytekhnicheskaya, St. Petersburg 194021, Russia

Phone: +7 812 247 91 24, Fax: +7 812 247 36 20Search for more papers by this author
O. G. Lyublinskaya

O. G. Lyublinskaya

Ioffe Physico-Technical Institute, 26 Polytekhnicheskaya, St. Petersburg 194021, Russia

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S. V. Sorokin

S. V. Sorokin

Ioffe Physico-Technical Institute, 26 Polytekhnicheskaya, St. Petersburg 194021, Russia

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A. A. Sitnikova

A. A. Sitnikova

Ioffe Physico-Technical Institute, 26 Polytekhnicheskaya, St. Petersburg 194021, Russia

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D. D. Solnyshkov

D. D. Solnyshkov

Ioffe Physico-Technical Institute, 26 Polytekhnicheskaya, St. Petersburg 194021, Russia

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O. V. Rykhova

O. V. Rykhova

Ioffe Physico-Technical Institute, 26 Polytekhnicheskaya, St. Petersburg 194021, Russia

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A. A. Toropov

A. A. Toropov

Ioffe Physico-Technical Institute, 26 Polytekhnicheskaya, St. Petersburg 194021, Russia

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S. V. Ivanov

S. V. Ivanov

Ioffe Physico-Technical Institute, 26 Polytekhnicheskaya, St. Petersburg 194021, Russia

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First published: 07 March 2006
Citations: 5

Abstract

This paper reports on the attempt to apply the stressor-controlled quantum dot (QD) fabrication technique to the conventional CdSe/ZnSe nanostructures. Super-strained CdTe fractional monolayer (Δa/a ∼ 14% for CdTe/ZnSe) grown on top of the Te-stabilized ZnSe surface prior to deposition of the QD material (CdSe) has been used as a stressor which is expected to affect size, composition and density of CdSe QDs. The grown structures are studied by X-ray diffraction, transmission-electron microscopy, photoluminescence (PL) and PL excitation in comparison with conventional CdSe/ZnSe QDs obtained by a modified migration enhanced epitaxy technique. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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