Volume 3, Issue 4 pp. 1010-1013
Original Paper

Influence of the ex-situ and in-situ annealed self-buffer layer on ZnO film

Jinzhong Wang

Jinzhong Wang

Department of Materials Science/CENIMAT, Faculty of Science and Technology, New Lisbon University, 2829-516 Caparica, Portugal

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Vincent Sallet

Vincent Sallet

Laboratoire de Physique des Solides et de Cristallogenèse, C.N.R.S., 1 Place Aristide Briand, 92195 Meudon Cedex, France

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Gaëlle Amiri

Gaëlle Amiri

Laboratoire de Physique des Solides et de Cristallogenèse, C.N.R.S., 1 Place Aristide Briand, 92195 Meudon Cedex, France

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Jean-François Rommelluere

Jean-François Rommelluere

Laboratoire de Physique des Solides et de Cristallogenèse, C.N.R.S., 1 Place Aristide Briand, 92195 Meudon Cedex, France

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Alain Lusson

Alain Lusson

Laboratoire de Physique des Solides et de Cristallogenèse, C.N.R.S., 1 Place Aristide Briand, 92195 Meudon Cedex, France

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E. Rzepka

E. Rzepka

Laboratoire de Physique des Solides et de Cristallogenèse, C.N.R.S., 1 Place Aristide Briand, 92195 Meudon Cedex, France

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John E. Lewis

John E. Lewis

Physics Department, Plattsburgh State University of New York, 101 Broad Street, Plattsburgh, NY 12901, USA

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Pierre Galtier

Pierre Galtier

Laboratoire de Physique des Solides et de Cristallogenèse, C.N.R.S., 1 Place Aristide Briand, 92195 Meudon Cedex, France

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Elvira Fortunato

Elvira Fortunato

Department of Materials Science/CENIMAT, Faculty of Science and Technology, New Lisbon University, 2829-516 Caparica, Portugal

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Rodrigo Martins

Rodrigo Martins

Department of Materials Science/CENIMAT, Faculty of Science and Technology, New Lisbon University, 2829-516 Caparica, Portugal

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Ouri Gorochov

Ouri Gorochov

Laboratoire de Physique des Solides et de Cristallogenèse, C.N.R.S., 1 Place Aristide Briand, 92195 Meudon Cedex, France

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First published: 16 March 2006
Citations: 1

Abstract

Two self-buffer layers were grown on c-plane sapphire substrates by atmospheric MOCVD method using DEZn, tert-butanol as precursors and H2 as carrier gas. Then, they were respectively annealed in growth process and oxygen environment. After that, ZnO films were respectively grown on them. XRD spectra show that all the films were grown in [002] orientation. Furthermore, the film with a buffer layer annealed in oxygen exhibits much higher crystal quality. Its FWHM of the rocking curve is only 567 arcsec. Furthermore, its Raman scattering spectrum appears a much stronger E2 mode peak at 436 cm–1 and its PL spectrum appears a shoulder at 3.367 eV on the higher energy side. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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