Influence of the ex-situ and in-situ annealed self-buffer layer on ZnO film
Jinzhong Wang
Department of Materials Science/CENIMAT, Faculty of Science and Technology, New Lisbon University, 2829-516 Caparica, Portugal
Search for more papers by this authorVincent Sallet
Laboratoire de Physique des Solides et de Cristallogenèse, C.N.R.S., 1 Place Aristide Briand, 92195 Meudon Cedex, France
Search for more papers by this authorGaëlle Amiri
Laboratoire de Physique des Solides et de Cristallogenèse, C.N.R.S., 1 Place Aristide Briand, 92195 Meudon Cedex, France
Search for more papers by this authorJean-François Rommelluere
Laboratoire de Physique des Solides et de Cristallogenèse, C.N.R.S., 1 Place Aristide Briand, 92195 Meudon Cedex, France
Search for more papers by this authorAlain Lusson
Laboratoire de Physique des Solides et de Cristallogenèse, C.N.R.S., 1 Place Aristide Briand, 92195 Meudon Cedex, France
Search for more papers by this authorE. Rzepka
Laboratoire de Physique des Solides et de Cristallogenèse, C.N.R.S., 1 Place Aristide Briand, 92195 Meudon Cedex, France
Search for more papers by this authorJohn E. Lewis
Physics Department, Plattsburgh State University of New York, 101 Broad Street, Plattsburgh, NY 12901, USA
Search for more papers by this authorPierre Galtier
Laboratoire de Physique des Solides et de Cristallogenèse, C.N.R.S., 1 Place Aristide Briand, 92195 Meudon Cedex, France
Search for more papers by this authorElvira Fortunato
Department of Materials Science/CENIMAT, Faculty of Science and Technology, New Lisbon University, 2829-516 Caparica, Portugal
Search for more papers by this authorRodrigo Martins
Department of Materials Science/CENIMAT, Faculty of Science and Technology, New Lisbon University, 2829-516 Caparica, Portugal
Search for more papers by this authorOuri Gorochov
Laboratoire de Physique des Solides et de Cristallogenèse, C.N.R.S., 1 Place Aristide Briand, 92195 Meudon Cedex, France
Search for more papers by this authorJinzhong Wang
Department of Materials Science/CENIMAT, Faculty of Science and Technology, New Lisbon University, 2829-516 Caparica, Portugal
Search for more papers by this authorVincent Sallet
Laboratoire de Physique des Solides et de Cristallogenèse, C.N.R.S., 1 Place Aristide Briand, 92195 Meudon Cedex, France
Search for more papers by this authorGaëlle Amiri
Laboratoire de Physique des Solides et de Cristallogenèse, C.N.R.S., 1 Place Aristide Briand, 92195 Meudon Cedex, France
Search for more papers by this authorJean-François Rommelluere
Laboratoire de Physique des Solides et de Cristallogenèse, C.N.R.S., 1 Place Aristide Briand, 92195 Meudon Cedex, France
Search for more papers by this authorAlain Lusson
Laboratoire de Physique des Solides et de Cristallogenèse, C.N.R.S., 1 Place Aristide Briand, 92195 Meudon Cedex, France
Search for more papers by this authorE. Rzepka
Laboratoire de Physique des Solides et de Cristallogenèse, C.N.R.S., 1 Place Aristide Briand, 92195 Meudon Cedex, France
Search for more papers by this authorJohn E. Lewis
Physics Department, Plattsburgh State University of New York, 101 Broad Street, Plattsburgh, NY 12901, USA
Search for more papers by this authorPierre Galtier
Laboratoire de Physique des Solides et de Cristallogenèse, C.N.R.S., 1 Place Aristide Briand, 92195 Meudon Cedex, France
Search for more papers by this authorElvira Fortunato
Department of Materials Science/CENIMAT, Faculty of Science and Technology, New Lisbon University, 2829-516 Caparica, Portugal
Search for more papers by this authorRodrigo Martins
Department of Materials Science/CENIMAT, Faculty of Science and Technology, New Lisbon University, 2829-516 Caparica, Portugal
Search for more papers by this authorOuri Gorochov
Laboratoire de Physique des Solides et de Cristallogenèse, C.N.R.S., 1 Place Aristide Briand, 92195 Meudon Cedex, France
Search for more papers by this authorAbstract
Two self-buffer layers were grown on c-plane sapphire substrates by atmospheric MOCVD method using DEZn, tert-butanol as precursors and H2 as carrier gas. Then, they were respectively annealed in growth process and oxygen environment. After that, ZnO films were respectively grown on them. XRD spectra show that all the films were grown in [002] orientation. Furthermore, the film with a buffer layer annealed in oxygen exhibits much higher crystal quality. Its FWHM of the rocking curve is only 567 arcsec. Furthermore, its Raman scattering spectrum appears a much stronger E2 mode peak at 436 cm–1 and its PL spectrum appears a shoulder at 3.367 eV on the higher energy side. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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