Original Paper
Growth and characterization of self-assembled CdSe quantum dots in MgS barriers
Abstract
Samples containing CdSe quantum dots (QDs) embedded in MgS barriers have been grown by molecular beam epitaxy. Photoluminescence (PL) investigations at room temperature show a QD ensemble shift between 240 meV and 280 meV due to the enhanced carrier confinement compared to a reference sample without MgS barriers. Temperature dependent micro-PL measurements on single QDs indicate an activation energy of 70 meV for MgS barriers, which is a factor of 2.5 higher compared to ZnS0.06Se0.94 barriers. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
