Original Paper
Impurity segregation in CdZnTe by photoluminescence mapping
Abstract
Low temperature photoluminescence (PL) mapping is employed to retrospectively monitor the processes taking place during crystal growth. Time evolution of the solidification of the melt is derived from zinc concentration map, which is calculated from energy gap obtained from free-exciton (FX) reabsorption in the PL spectra. Investigation of the distribution of PL intensities of specific defects shows that at least relative segregation coefficients can be calculated. This method has a potential application in preparation and characterization of pure and homogeneous CdZnTe wafers and also in identification of unknown defects. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
