Volume 3, Issue 4 pp. 1055-1058
Original Paper

Photoelectrical and noise processes in CdTe crystals

I. S. Virt

I. S. Virt

Drogobych State Pedagogical University, Franko st. 24, Drogobych 82100, Ukraine

Institute of Biotechnology, University of Rzeszow, ul. Rejtana 16C, Rzeszow 35-959, Poland

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I. S. Bilyk

I. S. Bilyk

Drogobych State Pedagogical University, Franko st. 24, Drogobych 82100, Ukraine

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V. D. Popovych

V. D. Popovych

Drogobych State Pedagogical University, Franko st. 24, Drogobych 82100, Ukraine

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I. O. Rudyj

I. O. Rudyj

National University "Lviv Polytechnic", Bandera st. 12, Lviv 79001, Ukraine

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I. V. Kurilo

I. V. Kurilo

National University "Lviv Polytechnic", Bandera st. 12, Lviv 79001, Ukraine

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A. Kolek

A. Kolek

Department of Electronics Fundamentals, Rzeszow University of Technology, Wincentego Pola 2, Rzeszow 35-959, Poland

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M. Bester

M. Bester

Institute of Physics, University of Rzeszow, Rejtana 16A, Rzeszow 35-959, Poland

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M. Kuzma

M. Kuzma

Institute of Physics, University of Rzeszow, Rejtana 16A, Rzeszow 35-959, Poland

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First published: 16 March 2006
Citations: 1

Abstract

Two types of cadmium telluride single crystals were investigated: undoped CdTe grown by Bridgeman method and highly doped CdTe:Cl obtained by STHM. Photoconductivity properties of CdTe crystals were studied by the transient photoconductivity method. Persistent photo response due to the polarization effect was revealed in undoped samples. Noise spectra have been measured over a wide range of frequencies, from below 1 Hz up to 1 MHz, and for voltages applied the samples from 0 up to 200 V. Two type of noise dominates in the range of voltages and frequencies under investigation, namely excess 1/f noise and generation-recombination (G-R) noise. Two-phase model were applied to explain noise experimental results, which consider the presence of precipitates. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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