Volume 161, Issue 2 pp. 861-867
Original Paper
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Interband Resonance Raman Scattering in p-Type Semimagnetic Semiconductors in Quantizing Magnetic Field

F. M. Gashimzade

F. M. Gashimzade

Institute of Physics, Academy of Sciences of the Azerbaidzhan SSR, Baku

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T. G. Ismailov

T. G. Ismailov

Institute of Physics, Academy of Sciences of the Azerbaidzhan SSR, Baku

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R. S. Nadirzade

R. S. Nadirzade

Institute of Physics, Academy of Sciences of the Azerbaidzhan SSR, Baku

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First published: 1 October 1990

Prospekt Narimanova 33, SU-370143 Baku, USSR.

Abstract

en

The electron Raman scattering in the wide-gap semimagnetic semiconductor p-Cd1−xMnxTe in a quantizing magnetic field is studied. Expressions in analytical form for the differential effective cross section depending on frequency shift are obtained. The possibility of determination of exchange parameters from experiment is shown.

Abstract

ru

[Russian Text Ignored.]

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