Resonant Raman scattering in indirect-gap GaAs_1-xP_x alloys is studied. The multiphonon scattering intensity as a function of the incident energy and polarization correlation measurements of 2LO-phonon scattering are presented. The intensity dependence and the depolarization associated to the participation of large momentum resonant intermediate states are consistent with the hot exciton cascade model.

Abstract

Die resonante Ramanstreuung in GaAs_1-xP_x-Legierungen mit indirekter Bandlücke wird untersucht. Die Multiphonon-Streuintensität als Funktion der einfallenden Energie sowie Polarisationskorrelationsmessungen der 2LO-Phononstreuung werden angegeben. Die Intensitätsab- hängigkeit und die Depolarisation, die mit der Teilnahme von resonanten Zwischenzuständen mit großem Impuls verbunden ist, sind mit dem Kaskadenmodell heißer Exzitonen konsistent.

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Volume132, Issue1

1 November 1985

Pages 109-115

Hot-Exciton Orientation in Indirect-Gap GaAs_1−xP_x Alloys

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Hot-Exciton Orientation in Indirect-Gap GaAs1−xPx Alloys

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Hot-Exciton Orientation in Indirect-Gap GaAs_1−xP_x Alloys