Original Paper
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Photoluminescence and Recombination of Excess Carriers in Amorphous Hydrogenated Silicon
Polytekhnicheskaya 26, 194021 Leningrad, USSR.
Abstract
enConcomitant simultaneous investigations of both, photoluminescence (PL) and photoconductivity (PC) decay from steady-state levels are carried out for the first time under the same conditions for the same a-Si:H samples. It is found that there is no competition between radiative and non-radiative recombination channels for excess carriers. A general model of tunnel distant-pair recombination based on the experimental data is proposed for explanation of both, PL and PC.
Abstract
ru[Russian Text Ignored].
