For the description of beating effects and of the angular dependence of Shubnikov-De Haas oscillations (SDH) of the narrow-gap semiconductor HgSe, a method is developed which can be used to estimate parameters from measurements of the transverse SDH effect. Also the influence of quadratic terms in the energy versus magnetic induction relation of the Landau levels can be studied.

Abstract

Zur Beschreibung von Schwebungseffekten und der Winkelabhängigkeit von Shubnikov-De Haas-Oszillationen (SDH) des Zero-Gap-Halbleiters HgSe wird eine Methode entwickelt, die es gestattet, auf Messungen des transversalen SDH-Effektes ein Parameterschätzverfahren anzu-wenden. Ebenso kann der Einfluß von quadratischen Termen in der Abhängigkeit der Energie von der magnetischen Induktion der Landauniveaus untersucht werden.

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Volume127, Issue1

1 January 1985

Pages 227-236

Analysis of Shubnikov-De Haas Oscillations in HgSe

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Analysis of Shubnikov-De Haas Oscillations in HgSe

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