The luminescence characteristics of the hexagonal GaN (h-GaN) and cubic GaN (c-GaN) on micropatterned Si(100) substrates are explored. Microstripes of InGaN/GaN multiple quantum wells in the cubic and hexagonal phases are grown on V-grooved Si(100) substrate. The crystal phases are identified by X-ray diffraction and selective area electron diffraction, which shows the top surface is c-GaN(001) phase at the center and h-GaN(1$\overline{1}$01) at the side regions. Then, the energy dispersive X-ray spectra of the indium content demonstrate the indium content in cubic InGaN/GaN multiple quantum wells (c-MQWs) is higher than that in hexagonal InGaN/GaN MQWs (h-MQWs). In addition, photoluminescence and cathodoluminescence measurements reveal that a cubic InGaN/GaN quantum well has produced longer wavelengths. The c-MQWs could incorporate higher indium content and realize longer wavelength emissions, which has great potential to realize red light emitting diode.