Der Ladungspumpeffekt wurde an GaAs-MIS-Teststrukturen, die mit der MESFET-Technologie hergestellt wurden, beobachtet und in Abhüngigkeit von den Ansteuerbedingungen untersucht. Die Beschreibungerfolgte mit einem Ein-Term-Modell und erlaubt die Erklürung der Frequenzabhüngigkeit der über die Grenzflüchenzustünde gepumpten Ladungsdichte bei Ansteuerung der MIS-Gateelektrode mit Rechteck- und Dreieckspannung.

Abstract

The charge pumping effect has been observed on GaAs MIS test structures prepared by the MESFET technology and has been examined in dependence on the applied voltage pulses. For the description of the effect a one-term model is used allowing an explanation of the frequency dependence of the charge density pumped via surface states when voltage pulses of rectangular and triangular shape are applied to the MIS gate.

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Volume128, Issue2

16 December 1991

Pages 539-551

Ladungspumpeffekt in GaAs-MIS-Strukturen. I. Beschreibung des Effektes

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Ladungspumpeffekt in GaAs-MIS-Strukturen. I. Beschreibung des Effektes

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