Relaxation Processes in Amorphous Ge_0.16Se_0.84 Films

Z. El Gharras

Laboratoire d'Etude et de Caractérisation des Composes Amorphes et des Polymères, Faculté des Sciences et Techniques, Université de Rouen, Mont Saint Aignan

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C. Vautier,

C. Vautier

Laboratoire d'Etude et de Caractérisation des Composes Amorphes et des Polymères, Faculté des Sciences et Techniques, Université de Rouen, Mont Saint Aignan

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Z. El Gharras,

Z. El Gharras

Laboratoire d'Etude et de Caractérisation des Composes Amorphes et des Polymères, Faculté des Sciences et Techniques, Université de Rouen, Mont Saint Aignan

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C. Vautier,

C. Vautier

Laboratoire d'Etude et de Caractérisation des Composes Amorphes et des Polymères, Faculté des Sciences et Techniques, Université de Rouen, Mont Saint Aignan

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First published: 16 December 1991

https://doi.org/10.1002/pssa.2211280221

BP 118, F-76130 Mont Saint Aignan Cedex, France.

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Abstract

The irreversible changes in conductivity occuring in amorphous Ge_0.16Se_0.84 films during annealing are investigated. This relaxational behaviour is linked to defect elimination in the amorphous network. The existence of two different relaxation kinetics, for each annealing temperature, is pointed out. The apparent contradiction between the results and those obtained by thermal analysis is discussed.

Abstract

Les changements irréversibles de la conductivité de films de Ge_0,16Se_0,84 amorphes sont analysés en termes de relaxation liee à l'élimination de défauts dans le réseau amorphe. Pour chacune des températures de recuit il apparait deux cinétiques de relaxation différentes. La contradiction entre ces resultats et ceux obtenus par analyse thermique est egalement discutée.

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Volume128, Issue2

16 December 1991

Pages 447-453

Relaxation Processes in Amorphous Ge_0.16Se_0.84 Films

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Relaxation Processes in Amorphous Ge0.16Se0.84 Films

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Relaxation Processes in Amorphous Ge_0.16Se_0.84 Films