Volume 103, Issue 1 pp. 205-212
Original Paper
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Two-Light-Source Extrinsic Photoconductivity of GaAs:V

J. Pastrňák

J. Pastrňák

Institute of Physics, Czechoslovakian Academy of Sciences, Prague

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F. Karel

F. Karel

Institute of Physics, Czechoslovakian Academy of Sciences, Prague

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W. Ulrici

W. Ulrici

Zentralinstitut für Elektronenphysik der Akademie der Wissenschaften der DDR, Berlin

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First published: 16 September 1987
Citations: 2

Na Slovance 2, 18040 Praha 8, Czechoslovakia.

Hausvogteiplatz 5/7, DDR-1086 Berlin, GDR.

Abstract

en

Photoconductivity of n-type GaAs:V is measured at T = 78 K using additional illumination for achieving definite population conditions. The photoconductivity spectra are decomposed into contributions which can be assigned to optical transitions due to different kinds of vanadium centres.

Abstract

ru

[Russian Text Ignored].

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