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Power Performance of AlGaN/GaN High-Electron-Mobility Transistors with AlN Buffer on SiC Substrate at 3.5 GHz
First published: 18 August 2023
Graphical Abstract
Power Performance of AlGaN/GaN HEMTs
In article number 2200826, Okhyun Nam and colleagues present the power performance of an AlGaN/GaN HEMT with AlN buffer on a 4-inch SiC substrate, grown by high-temperature metalorganic chemical vapor deposition. The fabricated devices were examined and showed positive characteristics, such as low slump ratio and breakdown voltage. The results demonstrate the potential of using an AlN buffer HEMT in high-power RF devices of the future.
