Volume 219, Issue 11 2100823
Review

Assessment of Lead-Free Tin Halide Perovskite Solar Cells Using J–V Hysteresis

Himanshu Dixit

Himanshu Dixit

Functional Materials and Device Laboratory, School of Energy Science and Engineering, Indian Institute of Technology Kharagpur, Kharagpur, 721302 India

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Binita Boro

Binita Boro

School of Nano Science and Technology, Indian Institute of Technology Kharagpur, Kharagpur, 721302 India

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Subrata Ghosh

Subrata Ghosh

Functional Materials and Device Laboratory, School of Energy Science and Engineering, Indian Institute of Technology Kharagpur, Kharagpur, 721302 India

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Mrittika Paul

Mrittika Paul

Functional Materials and Device Laboratory, School of Energy Science and Engineering, Indian Institute of Technology Kharagpur, Kharagpur, 721302 India

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Ashish Kumar

Ashish Kumar

Department of Physics, School of Engineering (SoE), University of Petroleum and Energy Studies (UPES), Bidholi, Dehradun, 248007 India

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Trilok Singh

Corresponding Author

Trilok Singh

Functional Materials and Device Laboratory, School of Energy Science and Engineering, Indian Institute of Technology Kharagpur, Kharagpur, 721302 India

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First published: 15 February 2022
Citations: 18

Abstract

Perovskite solar cells (PSCs) are considered as one of the most promising alternatives for existing solar cells due to its excellent optoelectronic properties and high efficiency. However, lead has posed a serious issue due to its toxicity which may hinder the commercial use of lead-based perovskite solar panels/arrays. There has been substantial work progress to find an environment-friendly alternative metal ion to replace lead. Tin (Sn)-based PSCs have been successfully synthesized and optimized with high efficiency, making it the most promising active material for lead-free PSCs. In this review, the role of J–V hysteresis in tin halide PSCs is discussed from the perspective of system structure, working concepts, and interfacial carrier dynamics in detail. The problem of hysteresis in PSCs is closely linked to ion migration, ferroelectric effects, capacitive effects, and trap-assisted recombination processes, which are highlighted in this review. Further, remediation to reduce the hysteresis by various strategies is explained for tin-based perovskites. The core focus of this review is to analyze the deterioration of device performance and stability caused due to the generation of defects in the perovskite films, leading to a time-dependent hysteresis of the current–voltage curves.

Conflict of Interest

The authors declare no conflict of interest.

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