Buried-Tunnel Junction Current Injection for InP-Based Nanomembrane Photonic Crystal Surface Emitting Lasers on Silicon

Herein, the design, metal-organic vapor-phase epitaxial growth, fabrication, and characterization of buried-tunnel junction (BTJ) current injection structures for InP/Si hybrid nanomembrane photonic crystal surface emitting lasers (PCSELs) are reported. Corresponding BTJ-light-emitting diodes on InP substrate show low series resistance and uniform carrier injection over square-shaped device areas with side length ranging from 15 up to 250 μm, whereas BTJ-PCSEL structures with similar current injection configuration fabricated on photonic-crystal silicon-on-insulator substrate using transfer print technology show significant linewidth narrowing at low current density.