Effects of Bi Irradiation on the Molecular Beam Epitaxy Growth of GaSb on Ge (111) Vicinal Substrates
Corresponding Author
Yasutomo Kajikawa
Interdisciplinary Faculty of Science and Engineering, Shimane University, Matsue, 690-8504 Japan
Search for more papers by this authorMakoto Nishigaichi
Interdisciplinary Faculty of Science and Engineering, Shimane University, Matsue, 690-8504 Japan
Search for more papers by this authorMasahiro Inoue
Interdisciplinary Faculty of Science and Engineering, Shimane University, Matsue, 690-8504 Japan
Search for more papers by this authorMitsunori Kayano
Interdisciplinary Faculty of Science and Engineering, Shimane University, Matsue, 690-8504 Japan
Search for more papers by this authorCorresponding Author
Yasutomo Kajikawa
Interdisciplinary Faculty of Science and Engineering, Shimane University, Matsue, 690-8504 Japan
Search for more papers by this authorMakoto Nishigaichi
Interdisciplinary Faculty of Science and Engineering, Shimane University, Matsue, 690-8504 Japan
Search for more papers by this authorMasahiro Inoue
Interdisciplinary Faculty of Science and Engineering, Shimane University, Matsue, 690-8504 Japan
Search for more papers by this authorMitsunori Kayano
Interdisciplinary Faculty of Science and Engineering, Shimane University, Matsue, 690-8504 Japan
Search for more papers by this authorAbstract
The growth of GaSb on Ge (111) vicinal substrates is performed by molecular beam epitaxy with Bi irradiation previous to and during the growth. The effects of the Bi irradiation on the surface morphology and on the crystallinity are investigated using atomic force microscopy and X-ray diffraction, respectively. It is shown that Bi works as a surfactant, which suppresses the generation of rotational twins in the GaSb layer.
Conflict of Interest
The authors declare no conflict of interest.
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References
- 1A. Krost, F. Heinrichsdorff, D. Bimberg, H. Cerva, Appl. Phys. Lett. 1994, 64, 769.
- 2A. Krost, F. Heinrichsdorff, F. Schnabel, K. Schatke, D. Bimberg, H. Cerva, J. Electron. Mater. 1994, 23, 135.
- 3Y. Ababou, R. A. Masut, A. Yelon, S. Poulin, Appl. Phys. Lett. 1995, 66, 3352.
- 4Y. Ababou, P. Desjardins, R. A. Masut, A. Yelon, G. Lesperance, Can. J. Phys. 1996, 74, S108.
- 5H. Toyota, T. Yasuda, T. Endoh, Y. Jinbo, N. Uchitomi, Phys. Stat. Sol. C 2008, 5, 2769.
- 6O. Rubel, S. D. Baranovski, Int. J. Mol. Sci. 2009, 10, 5104.
- 7A. Proessdorf, F. Grosse, O. Romanyuk, W. Braun, B. Jenichen, A. Trampert, H. Riechert, J. Cryst. Growth 2011, 323, 401.
- 8L. Wen, F. L. Gao, X. N. Zhang, S. G. Zhang, J. L. Li, Y. F. Guan, W. L. Wang, S. Z. Zhou, Z. T. Lin, G. Q. Li, J. Appl. Phys. 2014, 116, 193508.
- 9A. Krost, R. F. Schnabel, F. Heinrichsdorff, U. Rossow, D. Bimberg, H. Cerva, J. Cryst. Growth 1994, 145, 314.
- 10H. Y. Xu, Y. N. Guo, Y. Wang, J. Zou, J. H. Kang, Q. Gao, H. H. Tan, C. Jagadish, J. Appl. Phys. 2009, 106, 083514.
- 11M. Hornvonhoegen, F. K. Legoues, M. Copel, M. C. Reuter, R. M. Tromp, Phys. Rev. Lett. 1991, 67, 1130.
- 12F. K. Legoues, M. Hornvonhoegen, M. Copel, R. M. Tromp, Phys. Rev. B 1991, 44, 12894.
- 13M. Hornvonhoegen, M. Copel, J. C. Tsang, M. C. Reuter, R. M. Tromp, Phys. Rev. B 1994, 50, 10811.
- 14K. Sawano, Y. Hoshi, S. Kubo, K. Arimoto, J. Yamanaka, K. Nakagawa, K. Hamaya, M. Miyao, Y. Shiraki, Thin Solid Films 2016, 613, 24.
- 15Y. Kajikawa, Y. Son, H. Hayase, H. Ichiba, R. Mori, K. Ushirogouchi, M. Irie, J. Cryst. Growth 2017, 477, 40.
- 16Y. Kajikawa, M. Nishigaichi, S. Tenma, K. Kato, S. Kasube, J. Appl. Phys. 2018, 123, 16593.
- 17S. Nakamura, Jpn. J. Appl. Phys. 1991, 30, L1705.
- 18M. R. Pillai, S. S. Kim, H. S. T., S. A. Barnett, J. Vac. Sci. Technol. B 2000, 18, 1232.
- 19S. Tixier, M. Adamcyk, E. C. Young, J. H. Schmid, T. Tiedje, J. Cryst. Growth 2003, 251, 449.
- 20E. C. Young, S. Tixier, T. Tiedje, J. Cryst. Growth 2005, 279, 316.
- 21A. J. Ptak, D. A. Beaton, A. Mascarenhas, J. Cryst. Growth 2012, 351, 122.
- 22K. Kato, Y. Hasumi, A. Kozen, J. Temmyo, J. Appl. Phys. 1989, 65, 1947.
- 23K. Yang, L. J. Schowalter, B. K. Laurich, I. H. Campell, D. L. Smith, J. Vac. Sci. Technol. B 1993, 11, 779.
- 24L. J. Schowalter, K. Yang, T. Thundat, J. Vac. Sci. Technol. B 1994, 12, 2579.
- 25H. Schick, F. Bensing, U. Hilpert, U. Richter, L. Hansen, J. Wagner, V. Wagner, J. Geurts, A. Waag, G. Landwehr, J. Cryst. Growth 2000, 214/215, 1.
- 26L. Yue, X. Chen, Y. Zhang, F. Zhang, L. Wang, J. Shao, S. Wang, J. Alloys Compd. 2018, 742, 780.
- 27R. F. C. Farrow, J. Vac. Sci. Technol. B 1983, 1, 222.
- 28A. Kawazu, T. Otsuki, G. Tominaga, Jpn. J. Appl. Phys. 1981, 20, 553.
- 29H. Toyota, A. Okabe, T. Endoh, Y. Jinbo, N. Uchitomi, J. Cryst. Growth 2013, 378, 129.
- 30A. Proessdorf, F. Grosse, W. Braun, F. Katmis, H. Riechert, Phys. Rev. B 2011, 83, 155317.
- 31D. A. Reich, A. M. Wowchak, P. P. Chow, J. M. Van Hove, J. Cryst. Growth 1995, 150, 849.
- 32E. Hall, H. Kroemer, J. Cryst. Growth 1999, 203, 297.
- 33Y. Nakamura, S. Koshiba, H. Sakaki, J. Cryst. Growth 1997, 175/176, 1092.
- 34J. Tersoff, Y. H. Phang, Z. Y. Zhang, M. G. Lagally, Phys. Rev. Lett. 1995, 75, 2730.
- 35F. Liu, J. Tersoff, M. G. Lagally, Phys. Rev. Lett. 1998, 80, 1268.
- 36Z. M. Wang, J. L. Shultz, G. J. Salamo, Appl. Phys. Lett. 2003, 83, 1749.
- 37H.-W. Ren, X.-Q. Shen, T. Nishinaga, J. Cryst. Growth 1996, 166, 217.
- 38C. Guerre-Piecout, C. Fontaine, J. Vac. Sci. Technol. B 1998, 16, 204.
- 39X. Marcadet, A. Fily, S. Collin, J. P. Landesman, M. Larive, J. Olivier, J. Nagle, J. Cryst. Growth 1999, 201/202, 284.
- 40H. Wen, Z. M. Wang, J. L. Shultz, B. L. Liang, G. J. Salamo, Phys. Rev. B 2004, 70, 205307.
- 41P. N. Ni, J. C. Tong, L. Y. M. Tobing, S. P. Qiu, Z. J. Xu, X. H. Tang, D. H. Zhang, J. Electron. Mater. 2017, 46, 3867.
- 42M. Rajpalke, W. Linhart, M. Birkett, K. Yu, D. Scanlon, J. Buckeridge, T. Jones, M. Ashwin, T. Veal, Appl. Phys. Lett. 2013, 103, 142106.
- 43O. Delorme, L. Cerutti, E. Tournie, J. B. Rodriguez, J. Cryst. Growth 2017, 477, 144.
- 44E. Morita, M. Ikeda, M. Inoue, K. Kaneko, J. Cryst. Growth 1990, 106, 197.
- 45N. Matsumura, K. Maemura, T. Mori, J. Saraie, J. Cryst. Growth 1996, 159, 85.
- 46H. Gottschalk, G. Patzer, H. Alexander, Phys. Stat. Sol. A 1978, 45, 207.
- 47X. Zhou, S. Jiang, W. P. Kirk, J. Cryst. Growth 1997, 175/176, 624.
- 48Z. Y. Lu, Z. Zhang, P. P. Chen, S. X. Shi, L. C. Yao, C. Zhou, X. H. Zhou, J. Zou, W. Lu, Appl. Phys. Lett. 2014, 105, 162102.
- 49H. Udono, A. Motogaito, M. Kimura, A. Tanaka, T. Sukegawa, J. Cryst. Growth 1996, 169, 181.
- 50A. Y. Babkevich, R. A. Cowley, N. J. Mason, P. A. Shields, T. Stadelman, S. Brown, D. Mannix, D. Paul, J. Appl. Phys. 2004, 96, 3012.
- 51Y. R. Chen, L. C. Chou, Y. J. Yang, H. H. Lin, J. Phys. D: Appl. Phys. 2013, 46, 035306.
- 52K. C. Rajikumar, P. Chen, A. Madhukar, J. Appl. Phys. 1991, 69, 2219.
- 53Y. Park, M. J. Cich, R. Zhao, P. Secht, E. R. Weber, E. Stach, S. Nozaki, J. Vac. Sci. Technol. B 2000, 18, 1566.
- 54J. B. Barakat, S. Dadgostar, K. Hestroffer, O. Bierwagen, A. Trampert, F. Hatami, J. Cryst. Growth 2017, 477, 91.
- 55O. Morohara, H. Geka, Y. Moriyasu, N. Kuze, J. Cryst. Growth 2013, 378, 113.
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