Volume 204, Issue 8 pp. 2753-2759
Original Paper

X-ray diffraction spot mapping – a tool to study structural properties of semiconductor disk laser devices

U. Zeimer

Corresponding Author

U. Zeimer

Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany

Phone: +4930 63922679, Fax: +4903 63922685Search for more papers by this author
J. Grenzer

J. Grenzer

Forschungszentrum Rossendorf, Bautzener Landstr. 128, 01328 Dresden, Germany

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D. Korn

D. Korn

Universität Potsdam, Institut für Physik, Am Neuen Palais 10, 14415 Potsdam, Germany

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S. Döring

S. Döring

Universität Potsdam, Institut für Physik, Am Neuen Palais 10, 14415 Potsdam, Germany

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M. Zorn

M. Zorn

Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany

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W. Pittroff

W. Pittroff

Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany

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U. Pietsch

U. Pietsch

Universität Siegen, FB7 Physik, 57068 Siegen, Germany

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F. Saas

F. Saas

Max-Born-Institut für nichtlineare Optik und Kurzzeitspektroskopie, Max-Born-Str. 2a, 12489 Berlin, Germany

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M. Weyers

M. Weyers

Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany

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First published: 31 July 2007
Citations: 3

Abstract

Local lattice plane curvature of semiconductor disk laser devices is determined by an X-ray spot mapping technique using white beam synchrotron radiation. This method allows for in-situ studies of the dependence of the lattice plane profile on device temperature and local heating by optical pumping. The influence of different device mounting procedures on the structural and optical device parameters was investigated. This knowledge was used for device technology optimisation. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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