Volume 197, Issue 1 pp. 232-235
Original Paper

Filling porous silicon pores with poly(p phenylene vinylene)

T. P. Nguyen

T. P. Nguyen

Tel: +33 2 40 37 39 76, Fax: +33 2 40 37 39 91

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P. Le Rendu

P. Le Rendu

Laboratoire de Physique Cristalline, Institut des Matériaux Jean Rouxel, 44322 Nantes Cedex 3, France

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M. Lakéhal

M. Lakéhal

Laboratoire de Physique Cristalline, Institut des Matériaux Jean Rouxel, 44322 Nantes Cedex 3, France

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M. de Kok

M. de Kok

Institute of Material Research, Limburgs Universitair Centrum, 3590, Diepenbeek, Belgium

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D. Vanderzande

D. Vanderzande

Institute of Material Research, Limburgs Universitair Centrum, 3590, Diepenbeek, Belgium

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A. Bulou

A. Bulou

Laboratoire de Physique de l'Etat Condensé, 72085 Le Mans Cedex 09, France

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J. P. Bardeau

J. P. Bardeau

Laboratoire de Physique de l'Etat Condensé, 72085 Le Mans Cedex 09, France

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P. Joubert

P. Joubert

Laboratoire d'Optronique, IUT de Lannion, 22302 Lannion Cedex, France

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First published: 30 April 2003
Citations: 28

Abstract

We have investigated hybrid organic-inorganic systems composed of silicon–porous silicon and poly(phenylene vinylene) (PPV) in order to fabricate new light emitting devices, having properties of both materials. The key concern in these systems is the control of the penetration of the polymer into the pores of the semiconductor to obtain the best contact between the materials. By optimizing the deposition parameters, we have successfully filled the porous silicon wafers with PPV as proved by microscopy and Raman analysis of the sample cross section. We have also shown that the contact between the silicon pores and the polymer did not change the structure of both materials.

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