Volume 197, Issue 1 pp. 284-287
Original Paper

Lateral structuring of porous silicon: application to waveguides

A. M. Rossi

A. M. Rossi

Istituto Nazionale di Fisica della Materia, Torino Politecnico Unit, Corso Duca degli Abruzzi 24 10128 Torino, Italy

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S. Borini

S. Borini

Nanotechnology and Quantum Devices Lab, Istituto Elettrotecnico Nazionale “Galileo Ferraris”, Strada delle Cacce 91, 10135 Torino, Italy

Istituto Nazionale di Fisica della Materia, Torino Politecnico Unit, Corso Duca degli Abruzzi 24 10128 Torino, Italy

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L. Boarino

L. Boarino

Nanotechnology and Quantum Devices Lab, Istituto Elettrotecnico Nazionale “Galileo Ferraris”, Strada delle Cacce 91, 10135 Torino, Italy

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G. Amato

G. Amato

Nanotechnology and Quantum Devices Lab, Istituto Elettrotecnico Nazionale “Galileo Ferraris”, Strada delle Cacce 91, 10135 Torino, Italy

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First published: 30 April 2003
Citations: 13

Abstract

The problem of lateral definition of waveguides and photonic structures has been tackled by means of direct laser scribing on porous silicon (PS). The low thermal conductivity of PS allows for local oxidation and even the complete ablation of the material with laser power of a few mW. The buried Laser Local Oxidized (LaLOx) method exhibits great versatility and efficiency in achieving lateral light confinement in waveguides.

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