Etchant composition effects on porous silicon morphology and photoluminescence
L. Koker
School of Chemistry, The University of Birmingham, Edgbaston, Birmingham, B15 2TT, United Kingdom
Current address: QinetiQ, St Andrews Road, Malvern, Worcs, WR14 3PS, United Kingdom
Search for more papers by this authorA. Wellner
Nanoscale Physics Research Laboratory and the School of Physics and Astronomy, The University of Birmingham, Edgbaston, Birmingham, B15 2TT, United Kingdom
Current address: Laboratoire de Physique des Solides, UMR 5477, Université Paul Sabatier, 118 route de Narbonne, 31062 Toulouse Cedex 4, France
Search for more papers by this authorP. A. J. Sherratt
School of Chemistry, The University of Birmingham, Edgbaston, Birmingham, B15 2TT, United Kingdom
Search for more papers by this authorR. Neuendorf
Nanoscale Physics Research Laboratory and the School of Physics and Astronomy, The University of Birmingham, Edgbaston, Birmingham, B15 2TT, United Kingdom
Current address: Carl v. Ossietzky Universität Oldenburg, Fachbereich 9, Postfach 2503, 2611 Oldenburg, Germany
Search for more papers by this authorCorresponding Author
K. W. Kolasinski
School of Chemistry, The University of Birmingham, Edgbaston, Birmingham, B15 2TT, United Kingdom
Current address: Department of Chemistry, Queen Mary, University of London, Mile End Road, London E1 4NS, United Kingdom
Tel.: +44-20 7882 3255, Fax: +44-20 7782 7794Search for more papers by this authorL. Koker
School of Chemistry, The University of Birmingham, Edgbaston, Birmingham, B15 2TT, United Kingdom
Current address: QinetiQ, St Andrews Road, Malvern, Worcs, WR14 3PS, United Kingdom
Search for more papers by this authorA. Wellner
Nanoscale Physics Research Laboratory and the School of Physics and Astronomy, The University of Birmingham, Edgbaston, Birmingham, B15 2TT, United Kingdom
Current address: Laboratoire de Physique des Solides, UMR 5477, Université Paul Sabatier, 118 route de Narbonne, 31062 Toulouse Cedex 4, France
Search for more papers by this authorP. A. J. Sherratt
School of Chemistry, The University of Birmingham, Edgbaston, Birmingham, B15 2TT, United Kingdom
Search for more papers by this authorR. Neuendorf
Nanoscale Physics Research Laboratory and the School of Physics and Astronomy, The University of Birmingham, Edgbaston, Birmingham, B15 2TT, United Kingdom
Current address: Carl v. Ossietzky Universität Oldenburg, Fachbereich 9, Postfach 2503, 2611 Oldenburg, Germany
Search for more papers by this authorCorresponding Author
K. W. Kolasinski
School of Chemistry, The University of Birmingham, Edgbaston, Birmingham, B15 2TT, United Kingdom
Current address: Department of Chemistry, Queen Mary, University of London, Mile End Road, London E1 4NS, United Kingdom
Tel.: +44-20 7882 3255, Fax: +44-20 7782 7794Search for more papers by this authorAbstract
Laser assisted etching of n-type silicon, without an applied potential, to form porous silicon has been studied in a variety of etchants. The range of pore diameters correlates with the ratio of the activities of HF and HF–2. Where the activity ratio HF–2: HF is low, small (<10 nm) pores are formed, while where HF–2: HF is high only larger pores (20–100 nm) are observed. The dependence of pore morphology on etchant composition demonstrates the importance of specific etch chemistry during pore formation. The composition of the film is also affected by the etchant. In particular hexafluorosilicates can deposit during porous silicon formation in solutions containing K+, Rb+ and Cs+. The presence of hexafluorosilicates strongly affects the photoluminescence from the layers. We ascribe the strong, blue-shifted photoluminescence to emission from states at the hexafluorosilicate/Si interface.
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