Laser-assisted nickel deposition onto porous silicon
Corresponding Author
J. Sasano
Institute of Advanced Energy, Kyoto University, Uji, Kyoto 611-0011, Japan
Fax: +81-774-38-3499, Phone: +81-774-38-3498Search for more papers by this authorP. Schmuki
Institute for Surface Science and Corrosion, University of Erlangen-Nürnberg, 91058 Erlangen, Germany
Search for more papers by this authorT. Sakka
Institute of Advanced Energy, Kyoto University, Uji, Kyoto 611-0011, Japan
Search for more papers by this authorY. H. Ogata
Institute of Advanced Energy, Kyoto University, Uji, Kyoto 611-0011, Japan
Search for more papers by this authorCorresponding Author
J. Sasano
Institute of Advanced Energy, Kyoto University, Uji, Kyoto 611-0011, Japan
Fax: +81-774-38-3499, Phone: +81-774-38-3498Search for more papers by this authorP. Schmuki
Institute for Surface Science and Corrosion, University of Erlangen-Nürnberg, 91058 Erlangen, Germany
Search for more papers by this authorT. Sakka
Institute of Advanced Energy, Kyoto University, Uji, Kyoto 611-0011, Japan
Search for more papers by this authorY. H. Ogata
Institute of Advanced Energy, Kyoto University, Uji, Kyoto 611-0011, Japan
Search for more papers by this authorAbstract
As a direct metal patterning method, local electrodeposition of Ni onto porous silicon (PS) is studied. The principle of the method in this research utilizes the photo-excitation of semiconductor, in contrast to the previous studies of laser assisted metal deposition, in which the deposition is enhanced by heating effects or sensitization by laser irradiation. Electrochemical measurements show the different behaviors between PS and planar Si. The current is lower for PS than planar Si. The higher rate of charge recombination in PS is considered as a probable reason of this low current in PS. Also it was shown that the nucleation rate was low on PS.
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