Analysis for nonradiative recombination loss and radiation degradation of Si space solar cells
Corresponding Author
Masafumi Yamaguchi
Semiconductors Laboratory, Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya, 468-8511 Japan
Correspondence
Masafumi Yamaguchi, Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-851, Japan.
Email: [email protected]
Search for more papers by this authorKan-Hua Lee
Semiconductors Laboratory, Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya, 468-8511 Japan
Search for more papers by this authorKenji Araki
Semiconductors Laboratory, Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya, 468-8511 Japan
Search for more papers by this authorNobuaki Kojima
Semiconductors Laboratory, Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya, 468-8511 Japan
Search for more papers by this authorYasuki Okuno
Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, 980-8577 Japan
Search for more papers by this authorMitsuru Imaizumi
Research and Development Directorate, Japan Aerospace Exploration Agency, 2-1-1 Sengen, Tsukuba, Ibaraki, 305-8505 Japan
Search for more papers by this authorCorresponding Author
Masafumi Yamaguchi
Semiconductors Laboratory, Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya, 468-8511 Japan
Correspondence
Masafumi Yamaguchi, Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-851, Japan.
Email: [email protected]
Search for more papers by this authorKan-Hua Lee
Semiconductors Laboratory, Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya, 468-8511 Japan
Search for more papers by this authorKenji Araki
Semiconductors Laboratory, Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya, 468-8511 Japan
Search for more papers by this authorNobuaki Kojima
Semiconductors Laboratory, Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya, 468-8511 Japan
Search for more papers by this authorYasuki Okuno
Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, 980-8577 Japan
Search for more papers by this authorMitsuru Imaizumi
Research and Development Directorate, Japan Aerospace Exploration Agency, 2-1-1 Sengen, Tsukuba, Ibaraki, 305-8505 Japan
Search for more papers by this authorAbstract
Silicon space solar cells are currently attracting attention again for their relatively low-cost feature with sufficient performance, and they are expected to resume into the space market especially by short-term mission spacecraft designers. In this paper, efficiency potential of crystalline Si space solar cells is analyzed by considering external radiative efficiency (ERE), voltage and fill factor losses. Crystalline Si space solar cells have efficiency potential of more than 26% by realizing ERE of 20% from about 0.2% and normalized resistance of less than 0.05 from around 0.15. Nonradiative recombination and resistance losses in Si space solar cells are also discussed. Radiation degradation of Si space solar cells is also analyzed. Advanced Si solar cells such as passivated emitter, hetero-junction, and back contact solar cells are expected to use as space solar cells. Potential of advanced Si solar cells for space applications is discussed from point view of radiation degradation.
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