Interface analysis of ultrathin SiO2 layers between c-Si substrates and phosphorus-doped poly-Si by theoretical surface potential analysis using the injection-dependent lifetime
Sungjin Choi
Photovoltaics Research Department, Korea Institute of Energy Research, Daejeon, 34129 Republic of Korea
Department of Energy Environment Policy and Technology, Graduate School of Energy & Environment (KU-KIST GREEN SCHOOL), Korea University, Seoul, 02855 Republic of Korea
Search for more papers by this authorJimin Baek
Photovoltaics Research Department, Korea Institute of Energy Research, Daejeon, 34129 Republic of Korea
Department of Materials Science and Engineering, Yonsei University, Seoul, 03722 Republic of Korea
Search for more papers by this authorTaejun Kim
Hyundai Energy Solutions, PV R&D Center, Eumseong, 27711 Republic of Korea
Search for more papers by this authorKwan Hong Min
Photovoltaics Research Department, Korea Institute of Energy Research, Daejeon, 34129 Republic of Korea
Department of Materials Science and Engineering, Korea University, Seoul, 02855 Republic of Korea
Search for more papers by this authorMyeong Sang Jeong
Photovoltaics Research Department, Korea Institute of Energy Research, Daejeon, 34129 Republic of Korea
Department of Materials Science and Engineering, Korea University, Seoul, 02855 Republic of Korea
Search for more papers by this authorHee-eun Song
Photovoltaics Research Department, Korea Institute of Energy Research, Daejeon, 34129 Republic of Korea
Search for more papers by this authorMin Gu Kang
Photovoltaics Research Department, Korea Institute of Energy Research, Daejeon, 34129 Republic of Korea
Search for more papers by this authorDonghwan Kim
Department of Energy Environment Policy and Technology, Graduate School of Energy & Environment (KU-KIST GREEN SCHOOL), Korea University, Seoul, 02855 Republic of Korea
Department of Materials Science and Engineering, Korea University, Seoul, 02855 Republic of Korea
Search for more papers by this authorYoonmook Kang
Department of Energy Environment Policy and Technology, Graduate School of Energy & Environment (KU-KIST GREEN SCHOOL), Korea University, Seoul, 02855 Republic of Korea
Search for more papers by this authorHae-Seok Lee
Department of Energy Environment Policy and Technology, Graduate School of Energy & Environment (KU-KIST GREEN SCHOOL), Korea University, Seoul, 02855 Republic of Korea
Search for more papers by this authorJae-Min Myoung
Department of Materials Science and Engineering, Yonsei University, Seoul, 03722 Republic of Korea
Search for more papers by this authorCorresponding Author
Sungeun Park
Photovoltaics Research Department, Korea Institute of Energy Research, Daejeon, 34129 Republic of Korea
Correspondence
Sungeun Park, Photovoltaics Research Department, Korea Institute of Energy Research, Daejeon 34129, Republic of Korea.
Email: [email protected]
Jae-Min Myoung, Department of Materials Science and Engineering, Yonsei University, Seoul, 03722, Republic of Korea.
Email: [email protected]
Hae-Seok Lee Department of Energy Environment Policy and Technology, Graduate School of Energy & Environment (KU-KIST GREEN SCHOOL), Korea University, Seoul, 02841, Republic of Korea.
Email: [email protected]
Search for more papers by this authorSungjin Choi
Photovoltaics Research Department, Korea Institute of Energy Research, Daejeon, 34129 Republic of Korea
Department of Energy Environment Policy and Technology, Graduate School of Energy & Environment (KU-KIST GREEN SCHOOL), Korea University, Seoul, 02855 Republic of Korea
Search for more papers by this authorJimin Baek
Photovoltaics Research Department, Korea Institute of Energy Research, Daejeon, 34129 Republic of Korea
Department of Materials Science and Engineering, Yonsei University, Seoul, 03722 Republic of Korea
Search for more papers by this authorTaejun Kim
Hyundai Energy Solutions, PV R&D Center, Eumseong, 27711 Republic of Korea
Search for more papers by this authorKwan Hong Min
Photovoltaics Research Department, Korea Institute of Energy Research, Daejeon, 34129 Republic of Korea
Department of Materials Science and Engineering, Korea University, Seoul, 02855 Republic of Korea
Search for more papers by this authorMyeong Sang Jeong
Photovoltaics Research Department, Korea Institute of Energy Research, Daejeon, 34129 Republic of Korea
Department of Materials Science and Engineering, Korea University, Seoul, 02855 Republic of Korea
Search for more papers by this authorHee-eun Song
Photovoltaics Research Department, Korea Institute of Energy Research, Daejeon, 34129 Republic of Korea
Search for more papers by this authorMin Gu Kang
Photovoltaics Research Department, Korea Institute of Energy Research, Daejeon, 34129 Republic of Korea
Search for more papers by this authorDonghwan Kim
Department of Energy Environment Policy and Technology, Graduate School of Energy & Environment (KU-KIST GREEN SCHOOL), Korea University, Seoul, 02855 Republic of Korea
Department of Materials Science and Engineering, Korea University, Seoul, 02855 Republic of Korea
Search for more papers by this authorYoonmook Kang
Department of Energy Environment Policy and Technology, Graduate School of Energy & Environment (KU-KIST GREEN SCHOOL), Korea University, Seoul, 02855 Republic of Korea
Search for more papers by this authorHae-Seok Lee
Department of Energy Environment Policy and Technology, Graduate School of Energy & Environment (KU-KIST GREEN SCHOOL), Korea University, Seoul, 02855 Republic of Korea
Search for more papers by this authorJae-Min Myoung
Department of Materials Science and Engineering, Yonsei University, Seoul, 03722 Republic of Korea
Search for more papers by this authorCorresponding Author
Sungeun Park
Photovoltaics Research Department, Korea Institute of Energy Research, Daejeon, 34129 Republic of Korea
Correspondence
Sungeun Park, Photovoltaics Research Department, Korea Institute of Energy Research, Daejeon 34129, Republic of Korea.
Email: [email protected]
Jae-Min Myoung, Department of Materials Science and Engineering, Yonsei University, Seoul, 03722, Republic of Korea.
Email: [email protected]
Hae-Seok Lee Department of Energy Environment Policy and Technology, Graduate School of Energy & Environment (KU-KIST GREEN SCHOOL), Korea University, Seoul, 02841, Republic of Korea.
Email: [email protected]
Search for more papers by this authorSungjin Choi and Jimin Baek are co-first authors and contributed equally to this work.
Abstract
Passivated contact structures are often representative of tunnel oxide passivated contact (TOPCon) and polycrystalline silicon on oxide (POLO) solar cells. These passivated contact technologies in silicon solar cells have experienced great strides in efficiency. However, characteristics analysis of poly-Si/SiO2 applied to TOPCon and POLO solar cells as a carrier-selective and passivated contact is still challenging because the silicon oxide film is very thin (<1.5 nm), poly-Si and silicon oxide properties change during thermal treatment for passivation effects, and dopant diffusion from poly-Si layer to the silicon wafer occurs. In this study, the interfacial analysis was performed by applying an algorithm based on the extended Shockley–Read–Hall (SRH) theory to the P-doped poly-Si/SiO2/c-Si structure. Quantitative parameters of the P-doped poly-Si/SiO2/c-Si interface were extracted by fitting the measured and simulated lifetime curves with algorithms, such as Dit (interface trap density) and Qf (fixed charge), from which we were able to elucidate the passivation effect of the interface. The interface analysis method using this algorithm is meaningful in that it can quantify the passivation characteristics of TOPCon with very thin silicon oxide film. The interface characteristics were also analyzed using the injection-dependent lifetime after thermal treatment of P-doped poly-Si/SiO2/c-Si samples for passivation effect. After the 850°C thermal treatment, the following best passivation effects were verified, namely, ψs = 0.248 eV, Dit = 1.0 × 1011 cm−2·eV−1, Qf = 2.4 × 1012 cm−2, and J02 = 370 pA·cm−2. Through the analysis model using carrier lifetime theory, we investigated quantitatively the passivation properties of P-doped poly-Si/SiO2/c-Si.
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