Microwave and Optical Technology Letters

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A method for optimizing efficiency and power dissipations in high power microwave/ millimeter-wave amplifiers

Robert Larose

Microwave Research Laboratory Electrical Engineering Department Ecole Polytechnique de Montréal P.O. Box 6079, Station A Montreal, Quebec H3C 3A7

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Fadhel M. Ghannouchi,

Fadhel M. Ghannouchi

Microwave Research Laboratory Electrical Engineering Department Ecole Polytechnique de Montréal P.O. Box 6079, Station A Montreal, Quebec H3C 3A7

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Renato G. Bosisio,

Renato G. Bosisio

Microwave Research Laboratory Electrical Engineering Department Ecole Polytechnique de Montréal P.O. Box 6079, Station A Montreal, Quebec H3C 3A7

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Robert Larose,

Robert Larose

Microwave Research Laboratory Electrical Engineering Department Ecole Polytechnique de Montréal P.O. Box 6079, Station A Montreal, Quebec H3C 3A7

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Fadhel M. Ghannouchi,

Fadhel M. Ghannouchi

Microwave Research Laboratory Electrical Engineering Department Ecole Polytechnique de Montréal P.O. Box 6079, Station A Montreal, Quebec H3C 3A7

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Renato G. Bosisio,

Renato G. Bosisio

Microwave Research Laboratory Electrical Engineering Department Ecole Polytechnique de Montréal P.O. Box 6079, Station A Montreal, Quebec H3C 3A7

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First published: July 1990

https://doi.org/10.1002/mop.4650030707

Citations: 2

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Abstract

An alternative method for large signal characterization of microwave / millimeter-wave power transistors suitable for high power amplifier design is presented. Constant output power contours, constant added-power efficiency contours, and constant power dissipation contours over the full Smith chart are obtained for a NEC 71083 MESFET.

Reference

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Volume3, Issue7

July 1990

Pages 244-249

A method for optimizing efficiency and power dissipations in high power microwave/ millimeter-wave amplifiers

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A method for optimizing efficiency and power dissipations in high power microwave/ millimeter-wave amplifiers

Abstract

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