Microwave and Optical Technology Letters

Volume 64, Issue 5 pp. 962-971

RESEARCH ARTICLE

Numerical simulation and analysis of dual base transistor laser

Ramakrishnan Ranjith,

Corresponding Author

Ramakrishnan Ranjith

[email protected]

Department of Electronics and Communication Engineering, Government College of Engineering Bargur, Bargur, India

Correspondence

Ramakrishnan Ranjith, Department of Electronics and Communication Engineering, Government College of Engineering Bargur, Bargur, Tamil Nadu, India.

Email: [email protected]

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Shanmugasundaram Piramasubramanian,

Shanmugasundaram Piramasubramanian

Department of Electronics Engineering, Madras Institute of Technology Campus, Anna University Chennai, Chennai, India

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Muthu Ganesh Madhan,

Muthu Ganesh Madhan

Department of Electronics Engineering, Madras Institute of Technology Campus, Anna University Chennai, Chennai, India

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Ramakrishnan Ranjith,

Corresponding Author

Ramakrishnan Ranjith

[email protected]

Department of Electronics and Communication Engineering, Government College of Engineering Bargur, Bargur, India

Correspondence

Ramakrishnan Ranjith, Department of Electronics and Communication Engineering, Government College of Engineering Bargur, Bargur, Tamil Nadu, India.

Email: [email protected]

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Shanmugasundaram Piramasubramanian,

Shanmugasundaram Piramasubramanian

Department of Electronics Engineering, Madras Institute of Technology Campus, Anna University Chennai, Chennai, India

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Muthu Ganesh Madhan,

Muthu Ganesh Madhan

Department of Electronics Engineering, Madras Institute of Technology Campus, Anna University Chennai, Chennai, India

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First published: 11 February 2022

https://doi.org/10.1002/mop.33186

[Correction added on February 21, 2022, after first online publication: Authors first and last names was updated.]

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Abstract

In this work, characteristics of dual base transistor laser are numerically analyzed for the first time. Active base region of the transistor laser is split into two unequal regions composing of shorter and longer sections, which are biased separately. Static characteristics of transistor laser are evaluated using a rate equation model, which reveals switching action in output optical power for a longer section base current of 9.2 mA with unpumped shorter section. Hysteresis behavior in the optical output is observed for the longer section input current till 1.6 mA. Optical bistable characteristics are studied for various values of gain (longer) and absorber (shorter) section currents. Further slope efficiency is evaluated using P-I characteristics, before the onset of bistability, for gain lever features under common emitter (CE) configuration. A maximum gain lever of 4.5 dB is observed with the longer section bias current of 1.3 mA.

CONFLICT OF INTEREST

The authors declare no conflicts of interest.

Open Research

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Research data are not shared.

REFERENCES

1Lasher GJ. Analysis of a proposed bistable injection laser. Solid State Electron. 1964; 7: 707-716.
10.1016/0038-1101(64)90027-9
Web of Science® Google Scholar
2Ueno M, Lang R. Conditions for self-sustained pulsation and bistability in semiconductor lasers. Appl Phys Lett. 1985; 58: 1689.
CAS Google Scholar
3Vahala KJ, Newkirk MA, Chen TR. The optical gain lever: a novel gain mechanism in the direct modulation of quantum well semiconductor lasers. Appl Phys Lett. 1989; 54: 2506-2508.
10.1063/1.101076
CAS Web of Science® Google Scholar
4Moore N, Lau KY. Ultrahigh efficiency microwave signal transmission using tandem contact single quantum well GaAlAs lasers. Appl Phys Lett. 1989; 55: 936-938.
10.1063/1.101729
CAS Web of Science® Google Scholar
5Duan G-H, Landais P, Jacquet J. Modeling and measurement of bistable semiconductor lasers. IEEE J Quantum Electron. 1994; 30(11): 2507-2515.
10.1109/3.333702
CAS Web of Science® Google Scholar
6Seltzer CP, Westbook LD, Wickes HJ. The "gain-lever" effect in InGaAsP/InP multiple quantum well lasers. J Light Technol. 1995; 13(2): 283-289.
10.1109/50.365217
CAS Web of Science® Google Scholar
7Wang J-Y, Cada M, Van Dommelen R, Makino T. Dynamic characteristics of bistable laser diodes. IEEE J Sel Top Quantum Electron. 1997; 3(5): 1271-1279. doi:10.1109/2944.658607
10.1109/2944.658607
Web of Science® Google Scholar
8Pocha MD, Goddard LL, Bond TC, et al. Electrical and optical gain lever effects in InGaAsDouble quantum-well diode lasers. IEEE J Quantum Electron. 2007; 43(10): 860-868.
10.1109/JQE.2007.902796
CAS Web of Science® Google Scholar
9Piramasubramanian S, Ganesh Madhan M, Sindhuja A. Performance analysis of a digital fiber optic link incorporating gain-levered laser diode transmitter. Int J Numer Model. 2018; 31:e2321.
10.1002/jnm.2321
Web of Science® Google Scholar
10Piramasubramanian S, Madhan MG. Simultaneous reduction of IMD3 and IMD5 in bisection laser diode by feedback second harmonic injection. Opt Commun. 2014; 328: 151-160.
10.1016/j.optcom.2014.04.048
CAS Web of Science® Google Scholar
11Keiser G. Optical Fiber Communication. McGraw Hill Education; 2017.
Google Scholar
12Al-Rawesshidy H, Komaki S. Radio over Fiber Technologies for Mobile Communications Networks. Artech House; 2002.
Google Scholar
13Coldren LA, Corzine SW, Masanovic ML. Diode Lasers and Photonic Integrated Circuits. 2nd ed. John Wiley & Sons; 2012.
10.1002/9781118148167
Google Scholar
14Walter G, Holonyak N Jr, Feng M, Chan R. Laser operation of a heterojunction bipolar light-emitting transistor. Appl Phys Lett. 2004; 85: 4768-4770.
10.1063/1.1818331
CAS Web of Science® Google Scholar
15Feng M, Holonyak N Jr, Walter G, Chan R. Room temperature continuous wave operation of a heterojunction bipolar transistor laser. Appl Phys Lett. 2005; 87:131103.
10.1063/1.2058213
Web of Science® Google Scholar
16Then HW, Walter G, Feng M, Holonyak N Jr. Charge control analysis of transistor laser operation. Appl Phys Lett. 2007; 91:243508.
10.1063/1.2824817
Web of Science® Google Scholar
17Sato N, Shirao M, Sato T, et al. Design and characterization of AlGaInAs/InP buried heterostructure transistor lasers emitting at 1.3μm wavelength. IEEE J Sel Top Quantum Electron. 2013; 19(4): 1502608-1502608.
10.1109/JSTQE.2013.2250490
Web of Science® Google Scholar
18Zhang L, Leburton J-P. Modeling of the transient characteristics of heterojunction bipolar transistor lasers. IEEE J Quantum Electron. 2009; 45: 359-366.
10.1109/JQE.2009.2013215
CAS Web of Science® Google Scholar
19Faraji B, Shi W, Pulfrey DL, Chrostowski L. Analytical modeling of the transistor laser. IEEE J Sel Top Quantum Electron. 2009; 15(3): 594-603.
10.1109/JSTQE.2009.2013178
CAS Web of Science® Google Scholar
20Shirao M, Lee SH, Nishiyama N, Arai S. Large signal analysis of a transistor laser. IEEE J Quantum Electron. 2011; 47(3): 359-367.
10.1109/JQE.2010.2090341
CAS Web of Science® Google Scholar
21Ranjith R, Piramasubramanian S, Ganesh MM. Distortion analysis of 1.3μm AlGaInAs/InP transistor laser. In: I Bhattacharya, S Chakrabarti, H Reehal, V Lakshminarayanan, eds. Advances in Optical Science and Engineering. Springer Proceedings in Physics. Vol 194. Springer; 2017.
10.1007/978-981-10-3908-9_52
Google Scholar
22Ranjith R, Piramasubramanian S, Ganesh Madhan M. Effect of number of quantum wells on modulation and distortion characteristics of transistor laser. Opt Laser Technol. 2022; 147:107655. doi:10.1016/j.optlastec.2021.107655
10.1016/j.optlastec.2021.107655
Web of Science® Google Scholar
23Vinodhini SV, Piramasubramanian S, Ganesh Madhan M. Analysis of nonlinear distortion and its reduction using feedback injection schemes in an 1.3 μm transistor laser, 439. Opt Commun. 2019; 439: 224-232.
10.1016/j.optcom.2019.01.065
CAS Web of Science® Google Scholar

Volume64, Issue5

May 2022

Pages 962-971

Numerical simulation and analysis of dual base transistor laser

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CONFLICT OF INTEREST

Open Research

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Numerical simulation and analysis of dual base transistor laser

Abstract

CONFLICT OF INTEREST

Open Research

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REFERENCES

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