Volume 54, Issue 3 pp. 751-755

Investigation of the arbitrary waveform semiconductor laser as seed light source for high energy laser

Hongyun Wang

Hongyun Wang

Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi'an 710119, People's Republic of China

Graduate School of the Chinese Academy of Sciences, Beijing 100049, People's Republic of China

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Zhengshang Da

Zhengshang Da

Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi'an 710119, People's Republic of China

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Baiyu Liu

Baiyu Liu

Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi'an 710119, People's Republic of China

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Hui Liu

Corresponding Author

Hui Liu

Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi'an 710119, People's Republic of China

Graduate School of the Chinese Academy of Sciences, Beijing 100049, People's Republic of China

Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi'an 710119, People's Republic of ChinaSearch for more papers by this author
First published: 20 January 2012
Citations: 1

Abstract

A pulse semiconductor laser modulated by arbitrary shaping electrical waveform is produced and the generated optical pulse can be taken as the seed resource for high-power laser facilities.Based on ultrawide band microwave device and microstrip line transmission delay application, an all-solid-state circuit for generating arbitrary modulation pulse to modulate the semiconductor laser is fabricated. For improving the semiconductor laser power, the output laser pulse is sent into erbium-doped fiber master oscillator power amplifier architecture for amplification. In the experiment, the output laser pulse can be arbitrarily adjusted at 1547.9 nm center wavelength, less than 10 ns duration, lower than 100 kHz repetition rate, and 330 ps time domain adjustment. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:751–755, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26652

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