Volume 52, Issue 4 pp. 914-917

A noncoherent IR-UWB CMOS receiver for 3–5 GHz application

Mincheol Ha

Mincheol Ha

Department of Electronic Engineering, Kwangwoon University, 447-1 Wolgye-dong, Nowon-gu, Seoul 139-701, South Korea

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Youngjin Park

Youngjin Park

Korea Electrotechnology Research Institute, 662 Naeson-Dong, Uiwang-Si, Gyungki-Do 437-808, Korea

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Jae-Seung Lee

Jae-Seung Lee

Department of Electronic Engineering, Kwangwoon University, 447-1 Wolgye-dong, Nowon-gu, Seoul 139-701, South Korea

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Yunseong Eo

Corresponding Author

Yunseong Eo

Department of Electronic Engineering, Kwangwoon University, 447-1 Wolgye-dong, Nowon-gu, Seoul 139-701, South Korea

Department of Electronic Engineering, Kwangwoon University, 447-1 Wolgye-dong, Nowon-gu, Seoul 139-701, South KoreaSearch for more papers by this author
First published: 16 February 2010
Citations: 1

Abstract

A fully integrated noncoherent IR-UWB CMOS receiver is implemented using 0.18 μm CMOS technology.To remove the bulky and lossy external balun, the receiver contains single to differential circuit embedded in low-noise amplifier (LNA) stages. The LNA stage also includes a tunable LC load for band selection. The measured results show that the sensitivity is −78.9 dBm at 1 Mbps in condition of BER of 10–3. The chip size is 2.3 mm × 1.3 mm including pads. The consumed current is 20 mA at 1.8 V supply. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52:914–917, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25039

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