Volume 51, Issue 11 pp. 2585-2588

Ku-band substrate integrated waveguide transitions between layers

Kaijun Song

Corresponding Author

Kaijun Song

School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China

State Key Lab of Millimeter Waves, Department of Electronic Engineering, City University of Hong Kong, Hong Kong

School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, ChinaSearch for more papers by this author
Yong Fan

Yong Fan

School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China

Search for more papers by this author
First published: 25 August 2009
Citations: 5

Abstract

Two types of the substrate integrated waveguide (SIW) transitions between layers are presented in this letter. The SIW circuits have been used to achieve the transition from one layer to other layer. These two types of SIW transitions between layers operating in Ku-band have been designed and fabricated. The measured 10-dB return loss bandwidth of the transition between adjacent layers is about 7 GHz, and the measured 1-dB insertion loss bandwidth is about 5 GHz; the measured 13-dB return loss bandwidth of the unadjacent-layers transition is demonstrated to be about 3.7 GHz, and the measured insertion losses are less than 2 dB from 11.2 GHz to 15 GHz. The simulated and measured results indicate that these two SIW transitions take the advantages of broadband, low insertion loss, and low profile. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 2585–2588, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24685

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