Microwave and Optical Technology Letters

Volume 49, Issue 3 pp. 604-607

Calibration 90 nm node RF MOSFETs, including stress degradation

H. L. Kao,

H. L. Kao

Department of Electronic Engineering, Chang Gung University, Tao-Yuan, Taiwan, Republic of China

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C. H. Kao,

C. H. Kao

Department of Accounting Information, Takming College, Taiwan, Republic of China

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A. Chin,

A. Chin

Department of Electronics Engineering, National Chiao-Tung University, University System of Taiwan, Hsinchu, Taiwan, Republic of China

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C. C. Liao,

C. C. Liao

Department of Electronics Engineering, National Chiao-Tung University, University System of Taiwan, Hsinchu, Taiwan, Republic of China

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H. L. Kao,

H. L. Kao

Department of Electronic Engineering, Chang Gung University, Tao-Yuan, Taiwan, Republic of China

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C. H. Kao,

C. H. Kao

Department of Accounting Information, Takming College, Taiwan, Republic of China

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A. Chin,

A. Chin

Department of Electronics Engineering, National Chiao-Tung University, University System of Taiwan, Hsinchu, Taiwan, Republic of China

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C. C. Liao,

C. C. Liao

Department of Electronics Engineering, National Chiao-Tung University, University System of Taiwan, Hsinchu, Taiwan, Republic of China

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First published: 26 January 2007

https://doi.org/10.1002/mop.22209

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Abstract

Using a microstrip line layout, a low minimum noise figure (NF_min) of 0.51 dB, at 10 GHz, was directly measured for 90 nm node NMOSFETs (65 nm physical gate length). The NF_min was located at the peak f_T of 152 GHz, coinciding with the peak transconductance (g_m). On the basis of these measurements, a self-consistent model of the DC I-V, S-parameters, and NF_min results was developed, including the changes after hot-carrier stress. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 604–607, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22209

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Volume49, Issue3

March 2007

Pages 604-607

Calibration 90 nm node RF MOSFETs, including stress degradation

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Calibration 90 nm node RF MOSFETs, including stress degradation

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