Broadband linear-to-circular polarization reflector using anisotropic metasurface
Fei Long
Key Laboratory of Micro-Nano-Electronics of Guizhou Province, Power Semiconductor Device Reliability Research Center of the Ministry of Education, College of Big Data and Information Engineering, Guizhou University, Guiyang, China
College of Data Science and Information Engineering, Guizhou Minzu University, Guiyang, China
Search for more papers by this authorShixing Yu
Key Laboratory of Micro-Nano-Electronics of Guizhou Province, Power Semiconductor Device Reliability Research Center of the Ministry of Education, College of Big Data and Information Engineering, Guizhou University, Guiyang, China
Search for more papers by this authorZhengyi Yang
Key Laboratory of Micro-Nano-Electronics of Guizhou Province, Power Semiconductor Device Reliability Research Center of the Ministry of Education, College of Big Data and Information Engineering, Guizhou University, Guiyang, China
Search for more papers by this authorXucheng Li
Key Laboratory of Micro-Nano-Electronics of Guizhou Province, Power Semiconductor Device Reliability Research Center of the Ministry of Education, College of Big Data and Information Engineering, Guizhou University, Guiyang, China
Search for more papers by this authorZhao Ding
Key Laboratory of Micro-Nano-Electronics of Guizhou Province, Power Semiconductor Device Reliability Research Center of the Ministry of Education, College of Big Data and Information Engineering, Guizhou University, Guiyang, China
Search for more papers by this authorCorresponding Author
Zhengping Zhang
Key Laboratory of Micro-Nano-Electronics of Guizhou Province, Power Semiconductor Device Reliability Research Center of the Ministry of Education, College of Big Data and Information Engineering, Guizhou University, Guiyang, China
Correspondence
Zhengping Zhang, Key Laboratory of Micro-Nano-Electronics of Guizhou Province, Power Semiconductor Device Reliability Research Center of the Ministry of Education, College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China.
Email: [email protected]
Search for more papers by this authorFei Long
Key Laboratory of Micro-Nano-Electronics of Guizhou Province, Power Semiconductor Device Reliability Research Center of the Ministry of Education, College of Big Data and Information Engineering, Guizhou University, Guiyang, China
College of Data Science and Information Engineering, Guizhou Minzu University, Guiyang, China
Search for more papers by this authorShixing Yu
Key Laboratory of Micro-Nano-Electronics of Guizhou Province, Power Semiconductor Device Reliability Research Center of the Ministry of Education, College of Big Data and Information Engineering, Guizhou University, Guiyang, China
Search for more papers by this authorZhengyi Yang
Key Laboratory of Micro-Nano-Electronics of Guizhou Province, Power Semiconductor Device Reliability Research Center of the Ministry of Education, College of Big Data and Information Engineering, Guizhou University, Guiyang, China
Search for more papers by this authorXucheng Li
Key Laboratory of Micro-Nano-Electronics of Guizhou Province, Power Semiconductor Device Reliability Research Center of the Ministry of Education, College of Big Data and Information Engineering, Guizhou University, Guiyang, China
Search for more papers by this authorZhao Ding
Key Laboratory of Micro-Nano-Electronics of Guizhou Province, Power Semiconductor Device Reliability Research Center of the Ministry of Education, College of Big Data and Information Engineering, Guizhou University, Guiyang, China
Search for more papers by this authorCorresponding Author
Zhengping Zhang
Key Laboratory of Micro-Nano-Electronics of Guizhou Province, Power Semiconductor Device Reliability Research Center of the Ministry of Education, College of Big Data and Information Engineering, Guizhou University, Guiyang, China
Correspondence
Zhengping Zhang, Key Laboratory of Micro-Nano-Electronics of Guizhou Province, Power Semiconductor Device Reliability Research Center of the Ministry of Education, College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China.
Email: [email protected]
Search for more papers by this authorFunding information: Central Government Guide to Local Science and Technology Development Foundation, Grant/Award Number: QKZYD [2018]4009; Science and Technology Planning Project of Guizhou Province, Grant/Award Number: [2019] 1089; National Natural Science Foundation of China, Grant/Award Numbers: 11961009, 61961006
Abstract
A high-performance polarization reflector is introduced based on anisotropic metasurface. This structure can convert a linearly polarized (LP) incident electromagnetic (EM) wave into a circularly polarized (CP) reflection wave. The unit cell of the proposed metasurface is made of metallic patch imprinted on the top surface of a metal-backed single-layer dielectric substrate. The shape of this metallic patch is a combination of a deformed Jerusalem cross and two deformed L. The simulation results show that the LP incident EM wave is converted to CP reflected wave from 7 to 19.4 GHz, which the bandwidth of axis ratio less than 3 dB is 12.4 GHz and the relative bandwidth is 94%. The current distributions and equivalent circuit model are given to analyze the generation of circularly polarized waves. To verify the metasurface structure performance, a sample consisting of 24 × 24 unit cells is fabricated and measured. The experimental and simulation 3-dB AR bandwidth are basically consistent with each other, which verify the properties of the design. The proposed metasurface structure has potential application in microwave sensors and antenna design to manipulate the polarization states of EM waves.
Open Research
DATA AVAILABILITY STATEMENT
The data that support the findings of this study are available from the corresponding author upon reasonable request.
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