International Journal of RF and Microwave Computer-Aided Engineering

RESEARCH ARTICLE

Improved small-signal hybrid parameter-extraction technique for AlGaN/GaN high electron mobility transistors

Corresponding Author

Xuekun Du

[email protected]

orcid.org/0000-0002-5232-7641

Department of Electrical and Computer Engineering, Intelligent RF Radio Laboratory, University of Calgary, Calgary, Alberta, Canada

Correspondence

Xuekun Du, Department of Electrical and Computer Engineering, Intelligent RF Radio Laboratory, University of Calgary, Calgary, AB T2N 1N4, Canada.

Email: [email protected]

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Mohamed Helaoui,

Mohamed Helaoui

Department of Electrical and Computer Engineering, Intelligent RF Radio Laboratory, University of Calgary, Calgary, Alberta, Canada

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Jialin Cai,

Jialin Cai

orcid.org/0000-0001-7024-9248

Key Laboratory of RF Circuit and System, Ministry of Education, College of Electronics and Information, Hangzhou Dianzi University, Hangzhou, China

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Jun Liu,

Jun Liu

Key Laboratory of RF Circuit and System, Ministry of Education, College of Electronics and Information, Hangzhou Dianzi University, Hangzhou, China

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Fadhel M. Ghannouchi,

Fadhel M. Ghannouchi

Department of Electrical and Computer Engineering, Intelligent RF Radio Laboratory, University of Calgary, Calgary, Alberta, Canada

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Xuekun Du,

Corresponding Author

Xuekun Du

[email protected]

orcid.org/0000-0002-5232-7641

Department of Electrical and Computer Engineering, Intelligent RF Radio Laboratory, University of Calgary, Calgary, Alberta, Canada

Correspondence

Xuekun Du, Department of Electrical and Computer Engineering, Intelligent RF Radio Laboratory, University of Calgary, Calgary, AB T2N 1N4, Canada.

Email: [email protected]

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Mohamed Helaoui,

Mohamed Helaoui

Department of Electrical and Computer Engineering, Intelligent RF Radio Laboratory, University of Calgary, Calgary, Alberta, Canada

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Jialin Cai,

Jialin Cai

orcid.org/0000-0001-7024-9248

Key Laboratory of RF Circuit and System, Ministry of Education, College of Electronics and Information, Hangzhou Dianzi University, Hangzhou, China

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Jun Liu,

Jun Liu

Key Laboratory of RF Circuit and System, Ministry of Education, College of Electronics and Information, Hangzhou Dianzi University, Hangzhou, China

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Fadhel M. Ghannouchi,

Fadhel M. Ghannouchi

Department of Electrical and Computer Engineering, Intelligent RF Radio Laboratory, University of Calgary, Calgary, Alberta, Canada

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First published: 03 February 2021

https://doi.org/10.1002/mmce.22562

Citations: 5

Funding information: Alberta Innovates Technology Futures (AITF); Canada Research Chairs (CRC) Program; Foundation of the State Key Laboratory of Millimeter Waves, Grant/Award Number: K202011; National Natural Science Foundation of China, Grant/Award Numbers: 61701147, 61971170; National Science and Engineering Research Council (NSERC) of Canada

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Abstract

An improved hybrid parameter-extraction technique is proposed for the small-signal modeling application in AlGaN/GaN high electron mobility transistors (HEMTs). The capacitance partitioning characteristics of cold pinch-off GaN device with non-field-plate and field-plate structures are reinvestigated and the scanning range of parasitic capacitances C_pg and C_pd is determined. A systematic optimization approach is proposed to obtain the initial values of C_pg and C_pd. By using the global optimization algorithm, particle swarm optimization, the reliable parasitic parameters can be acquired based on the proposed error function. The validity of the developed hybrid parameter-extraction method is verified by 2 × 100 μm AlGaN/GaN HEMT with source-connected FP structure from 0.1 to 40 GHz among the 442 biasing points.

Open Research

DATA AVAILABILITY STATEMENT

The data that support the findings of this study are available on request from the corresponding author. The data are not publicly available due to privacy or ethical restrictions.

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Improved small-signal hybrid parameter-extraction technique for AlGaN/GaN high electron mobility transistors

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Improved small-signal hybrid parameter-extraction technique for AlGaN/GaN high electron mobility transistors

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Open Research

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