Spin-Deposited Ruddlesden–Popper Polycrystalline Perovskites for Large-Area High-Sensitivity Filterless Narrowband Photodetectors with Ultrafast Response Speed
Lihua Lu
School of Electronic Science and Engineering, Xiamen University, Xiamen, 361005 P. R. China
Search for more papers by this authorZiang Wan
School of Electronic Science and Engineering, Xiamen University, Xiamen, 361005 P. R. China
Search for more papers by this authorZhongli Guo
School of Electronic Science and Engineering, Xiamen University, Xiamen, 361005 P. R. China
Search for more papers by this authorHongqiang Luo
School of Electronic Science and Engineering, Xiamen University, Xiamen, 361005 P. R. China
Search for more papers by this authorYuanyuan Tian
School of Electronic Science and Engineering, Xiamen University, Xiamen, 361005 P. R. China
Search for more papers by this authorSijie Jiang
School of Electronic Science and Engineering, Xiamen University, Xiamen, 361005 P. R. China
Search for more papers by this authorYikai Yun
School of Electronic Science and Engineering, Xiamen University, Xiamen, 361005 P. R. China
Search for more papers by this authorHailong Hu
School of Electronic Science and Engineering, Xiamen University, Xiamen, 361005 P. R. China
Search for more papers by this authorSijia Zhou
School of Electronic Science and Engineering, Xiamen University, Xiamen, 361005 P. R. China
Search for more papers by this authorCorresponding Author
Mengyu Chen
School of Electronic Science and Engineering, Xiamen University, Xiamen, 361005 P. R. China
Future Display Institute of Xiamen, Xiamen, 361005 P. R. China
E-mail: [email protected]
Search for more papers by this authorCheng Li
School of Electronic Science and Engineering, Xiamen University, Xiamen, 361005 P. R. China
Future Display Institute of Xiamen, Xiamen, 361005 P. R. China
Search for more papers by this authorRong Zhang
Future Display Institute of Xiamen, Xiamen, 361005 P. R. China
Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Department of Physics and Engineering Research Center of Micro-Nano Optoelectronic Materials and Devices, Ministry of Education, Xiamen University, Xiamen, 361005 P. R. China
Search for more papers by this authorLihua Lu
School of Electronic Science and Engineering, Xiamen University, Xiamen, 361005 P. R. China
Search for more papers by this authorZiang Wan
School of Electronic Science and Engineering, Xiamen University, Xiamen, 361005 P. R. China
Search for more papers by this authorZhongli Guo
School of Electronic Science and Engineering, Xiamen University, Xiamen, 361005 P. R. China
Search for more papers by this authorHongqiang Luo
School of Electronic Science and Engineering, Xiamen University, Xiamen, 361005 P. R. China
Search for more papers by this authorYuanyuan Tian
School of Electronic Science and Engineering, Xiamen University, Xiamen, 361005 P. R. China
Search for more papers by this authorSijie Jiang
School of Electronic Science and Engineering, Xiamen University, Xiamen, 361005 P. R. China
Search for more papers by this authorYikai Yun
School of Electronic Science and Engineering, Xiamen University, Xiamen, 361005 P. R. China
Search for more papers by this authorHailong Hu
School of Electronic Science and Engineering, Xiamen University, Xiamen, 361005 P. R. China
Search for more papers by this authorSijia Zhou
School of Electronic Science and Engineering, Xiamen University, Xiamen, 361005 P. R. China
Search for more papers by this authorCorresponding Author
Mengyu Chen
School of Electronic Science and Engineering, Xiamen University, Xiamen, 361005 P. R. China
Future Display Institute of Xiamen, Xiamen, 361005 P. R. China
E-mail: [email protected]
Search for more papers by this authorCheng Li
School of Electronic Science and Engineering, Xiamen University, Xiamen, 361005 P. R. China
Future Display Institute of Xiamen, Xiamen, 361005 P. R. China
Search for more papers by this authorRong Zhang
Future Display Institute of Xiamen, Xiamen, 361005 P. R. China
Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Department of Physics and Engineering Research Center of Micro-Nano Optoelectronic Materials and Devices, Ministry of Education, Xiamen University, Xiamen, 361005 P. R. China
Search for more papers by this authorAbstract
Filterless perovskite narrowband photodetectors (PNPDs) are highly demanded in color and spectral discrimination, which are typically demonstrated by charge collection narrowing (CCN) effect of perovskite single crystals, showing a limited sensing area and slow response speed. Here, fast-response, high-sensitivity PNPDs are demonstrated using spin-deposited polycrystalline 2D (poly-2D) Ruddlesden–Popper (RP) perovskite films with thickness of ≈3.6 µm. The strong narrowband excitonic light absorption and limited charge diffusion length of poly-2D RP perovskites enable a favored long-wavelength response and a significant suppression of short-wavelength response to further strengthen the CCN effect. In particular, the photodetection properties, as well as the spectral rejection ratio and central response wavelength, can be finely tuned with an alkyl chain length of the spacer cations. The optimized devices achieve a narrow spectral response with a full-width at half-maximum of 12.7 nm, a record high peak specific detectivity of 1.09 × 1012 Jones and ultrafast response speed with rise/fall times of 5.6/11.5 µs, which outperform the published similar PNPDs. Moreover, a spin-deposited large-area sensing array with 6 × 6 PNPDs is fabricated with high consistency, for efficient color and shape discrimination demonstrations. This facile and versatile approach sheds light on the practical applications of large-area high-performance filterless PNPDs.
Conflict of Interest
The authors declare no conflict of interest.
Open Research
Data Availability Statement
The data that support the findings of this study are available from the corresponding author upon reasonable request.
Supporting Information
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