Mode and Polarization-Division Multiplexing Based on Silicon Nitride Loaded Lithium Niobate on Insulator Platform (Laser Photonics Rev. 16(1)/2022)
Graphical Abstract
(De)Multiplexing Technologies
In article number 2100529, Yonghui Tian, Arnan Mitchell, Yikai Su, and co-workers experimentally demonstrated mode and polarization-division multiplexing on a thin-film lithium niobate on insulator (LNOI) platform. By introducing silicon nitride as a loading material atop the LNOI photonics chip, the devices can be integrated with high-speed electro-optic modulators to achieve high-capacity and low-cost photonic integrated circuits suitable for data communication applications, while avoiding the direct etching of lithium niobate.