Volume 10, Issue 12 2200885
Research Article

Detached Vertical (Al,Ga)N Nanowires to Realize the Flexible Ultraviolet Photodetector with High Ultraviolet/Visible Reject Ratio and Detectivity

Min Zhou

Min Zhou

Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou, 215123 China

School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, 230026 China

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Yukun Zhao

Corresponding Author

Yukun Zhao

Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou, 215123 China

Nanchang Research Institute, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Nanchang, 330200 China

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Wenxian Yang

Wenxian Yang

Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou, 215123 China

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Jianya Zhang

Jianya Zhang

Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou, 215123 China

School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, 230026 China

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Min Jiang

Min Jiang

Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou, 215123 China

School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, 230026 China

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Yuanyuan Wu

Yuanyuan Wu

Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou, 215123 China

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Ziwei Xu

Ziwei Xu

Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou, 215123 China

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Shulong Lu

Corresponding Author

Shulong Lu

Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou, 215123 China

School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, 230026 China

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First published: 08 October 2022

Abstract

Flexible ultraviolet (UV) photodetectors (PDs) can meet the growing demands and wide applications of next-generation portable and lightweight optoelectronic devices. Herein, a flexible UV PD based on (Al,Ga)N nanowires (NWs) is proposed and successfully fabricated by numerical and experimental approaches, which have high UV/visible reject ratio (1.5 × 104) and detectivity (8 × 1010 Jones). To accelerate the carrier transport and enhance the response, the top–down–top current pathway is demonstrated by introducing interdigitated electrodes and graphene. The UV/visible reject ratio of the flexible PD can be enhanced over 40 times by removing epitaxial silicon substrate to eliminate the corresponding visible response, leading to an excellent detection selectivity. By numerical simulations, the electric field intensities of the NWs are comparative in the unbending and bending states. After −120° bending, the PD performance remains quite stable. Under different bending states, the maximum variation of different response time can be kept within 0.15 s. According to the experimental data, the barrier height is essentially unchanged under different bending states, which should be a key factor contributing to the outstanding stability of the PD.

Conflict of Interest

The authors declare no conflict of interest.

Data Availability Statement

The data that support the findings of this study are available from the corresponding author upon reasonable request.

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