Volume 43, Issue 9 pp. 1042-1050
Concise Report

Unlocking the Potential of Rare Earth-Enriched Aluminum Oxo Clusters for Enhanced Dielectric Properties

Ruiduan Ji

Ruiduan Ji

College of Chemistry, Fuzhou University, Fuzhou, Fujian, 350108 China

State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002 China

Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350002 China

Fujian College, University of Chinese Academy of Sciences, Fuzhou, Fujian, 350002 China

These authors contributed equally to this work.

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Xiaoyu Liu

Xiaoyu Liu

College of Chemistry and Materials Science, Fujian Normal University, Fuzhou, Fujian, 350007 China

State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002 China

Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350002 China

Fujian College, University of Chinese Academy of Sciences, Fuzhou, Fujian, 350002 China

These authors contributed equally to this work.

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Haizhou Pei

Haizhou Pei

State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002 China

Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350002 China

Fujian College, University of Chinese Academy of Sciences, Fuzhou, Fujian, 350002 China

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Wei-Hui Fang

Corresponding Author

Wei-Hui Fang

State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002 China

Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350002 China

Fujian College, University of Chinese Academy of Sciences, Fuzhou, Fujian, 350002 China

E-mail: [email protected]; [email protected]Search for more papers by this author
Weiguo Huang

Corresponding Author

Weiguo Huang

State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002 China

Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350002 China

Fujian College, University of Chinese Academy of Sciences, Fuzhou, Fujian, 350002 China

E-mail: [email protected]; [email protected]Search for more papers by this author
Jian Zhang

Jian Zhang

State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002 China

Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350002 China

Fujian College, University of Chinese Academy of Sciences, Fuzhou, Fujian, 350002 China

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First published: 14 February 2025

Comprehensive Summary

This study highlights the innovative use of increased rare earth elements to enhance the dielectric properties of materials and devices. The AlOC-129Ln series, features the highest number of rare earth dopants in aluminum oxo clusters to date. The trivalent ions in AlOC-129Ln impart a high dipole moment, significantly elevating the dielectric constant (k) of the doped polymer films. AlOC-129Ce, in particular, exhibits the largest molecular size, which enhances interfacial effects and achieves a relative dielectric constant four times greater than that of undoped polymers and 1.5 times higher than those with single rare earth dopants. The substantial molecular size (~2.5 nm) and robust charge scattering and trapping capabilities of AlOC-129Ln reduce dielectric loss by up to 50% at high frequencies. Additionally, its excellent solution processability enhances breakdown strength by 147%, ensuring superior electrical stability. This research demonstrates the versatility of the cluster doping strategy in effectively balancing dielectric constant and loss, unveiling the promising potential of solution-processable cluster materials in electronic devices.

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