Chemical liquid phase deposition of thin aluminum oxide films
Corresponding Author
Jie Sun
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Fax: 86-10-82305052Search for more papers by this authorYing-Chun Sun
Department of Foreign Languages, Shandong University, Weihai, Shandong 264209, China
Search for more papers by this authorCorresponding Author
Jie Sun
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Fax: 86-10-82305052Search for more papers by this authorYing-Chun Sun
Department of Foreign Languages, Shandong University, Weihai, Shandong 264209, China
Search for more papers by this authorAbstract
Thin aluminum oxide films were deposited by a new and simple physicochemical method called chemical liquid phase deposition (CLD) on semiconductor materials. Aluminum sulfate with crystallized water and sodium bicarbonate were used as precursors for film growth, and the control of the system's pH value played an important role in this experiment. The growth rate is 12 nm/h with the deposition at [Al2(SO4)] =0.0837 mol·L−1, [NaHCO3] = 0.214 mol·L−1, 15 °C Post-growth annealing not only densifies and purifies the films, but results in film crystallization as well. Excellent quality of Al2O3 films in this work is supported by electron dispersion spectroscopy. Fourier transform infrared spectrum, X-ray diffraction spectrum and scanning electron microscopy photograph.
References
- 1 Watanabe, Y.; Saitoh, T.; Miyazaki, M.; Suzuki, K. Thin Solid Films 1993, 233, 236.
- 2 Hashizume, T.; Yoshino, M.; Ishikawa, M.; Himozum, M. Jpn J. Appl Phys. 1994, 33, 3887.
- 3 Nagayama, H.; Honda, H.; Kawahara, H. J. Elecmchem Soc. 1988, 135, 2013.
- 4 Houng, M.; Wang, Y.; Huang, C.; Huang, S.; Horng, J. Solid-state Electron. 2000. 44, 1917.
- 5 Huang, C.; Chen, J.; Huang, S. Mater. Chem. Phys. 2001. 70, 78.
- 6 Houng, M.; Huang, C.; Wang, Y.; Wang, N.; Chang, W. J. Appl. Phys. 1997, 82, 5788.
- 7 Huang, C.; Houng, M.; Wang, Y.; Wang, N.; Chen, J. J. Vac. Sci. Technol. A 1998. 16, 2646.
- 8 Chou, J.; Lee, S. Appl. Phys. Lett. 1994, 64, 1971.
- 9 Yeh, C.; Chen, C.; Lur, W.; Yen, P. Appl. Phys. Lett. 1995, 66, 938.
- 10 Yeh, C.; Lin, S.; Hong, T. IEEE Electron Device Lett. 1995, 16, 316.
- 11 Yeh, J.; Lee, S. IEEE Electron Device Lett. 1999, 20, 138.
- 12 Yeh, K.; Jeng, M.; Hwu, J. Solid-State Electron. 1999, 43, 671.
- 13 Richardson, T.; Rubin, M. Electrochim Acta 2001, 46, 2119.
- 14 Tsskuma, K.; Akiyama, T.; Yamada, N.; Imai, H. J. Non-Cryst. Solids 1998. 231, 161.
- 15 Awazu, K.; Kawazoe, H.; Seki, K. J. Non-Cryst. Solids 1992, 151, 102.
- 16 Deki, S.; Aoi, Y.; Hiroi, O.; Kajinami, A. Chem. Lett. 1996, 433.
- 17 Tsukuma, K.; Akiyama, T.; Imai, H. J. Non-Cryst. Solids 1997, 210, 48.
- 18 Ino, J.; Hishinuma, A.; Nagayama, H.; Kawahara, H. US 4882183, 1989 [Chem. Abstr. 1989. 111, 62815].
- 19 Deki, S.; Aoi, Y.; Miyake, Y.; Gotoh, A.; Kajinami, A. Mater Res. Bull. 1996, 31, 1399.
- 20 Najdoski, M.; Grozdanov, I.; Minceva-Sukarova, B. J. Matre,:Chem. 1996, 6, 761.
- 21 Izaki, M.; Omi, T. J. Electrochem. Soc. 1997, 144, L3.
- 22 Pramanik, P.; Bhattacharya, S. J. Electrochem. Soc. 1990, 137, 3869.
- 23 Deki, S.; Aoi, Y.; Okibe, J.; Yanagimoto, H.; Kajinami, A.; Mizuhata, M. J. Mater Chem. 1997, 7, 1769.
- 24 Pande, K.; Nair, V.; Gutiemz, D. J. Appl. Phys. 1983, 54, 5436.
- 25 Zywitzki, O.; Goedicke, K.; Morgner, H. Surf Coat. Technol. 2002. 151–152, 14.
- 26 Kim, J.; Marzouk, H.; Reucroft, P.; Robertson, J.; Hamrin Jr., C. Appl. Phys. Lett. 1993, 62, 681.
- 27 Ortiz, A.; Alonso, J.; Pankov, V.; Huanosta, A.; Andrade, E. Thin Solid Film 2000, 368, 74.
- 28 Koski, K.; Hölsä, J.; Julie:, P. Surf Coat. Technol. 1999, 116–119, 716.
- 29 Tristant, P.; Ding, Z.; Vinh, Q.; Hidalgo, H.; Jauberteau, J.; Desmaison, J.; Dong, C. Thin Solid Film 2001, 390, 51.
- 30 Huang, C.; Houng, M.; Wang, Y.; Wang, H. J. Appl. Phys. 1999, 86, 7151.
- 31 Hardy, W. Proc. Roy. Soc. 1900, 66, 110.
- 32 Shek, C.; Lai, J.; Gu, T.; Lin, G. Nanostruct. Mater. 1997, 8, 605.
- 33 Suyama, S.; Okamoto, A.; Serikawa, T. IEEE Trans. Electron Devices 1987, 34, 2124.
