Volume 21, Issue 6 pp. 621-625
Article
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Photophysical and Photoelectric Properties of 2-{[4-(N-Hexadecyl-N-methylamino) phenyl] methylene}-propanedinitrile

Liu Di

Liu Di

Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100101, China

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Wu Kui-Wang

Wu Kui-Wang

Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100101, China

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Wang Xue-Song

Wang Xue-Song

Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100101, China

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Hou Yuan-Jun

Hou Yuan-Jun

Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100101, China

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Zhang Bao-Wen

Zhang Bao-Wen

Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100101, China

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Cao Yi

Cao Yi

Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100101, China

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First published: 26 August 2010
Citations: 2

Abstract

2-{[4-(N-Hexadecyl-N-methylamino) phenyl] methylene}-propanedinitrile (HMAPN) with typical donor-#-acceptor (D-#-A) structure was synthesized. It could be easily assembled into stable films by LB technique. The photophysical properties of HMAPN were investigated in solution and on LB films. The photoelectric properties of HMAPN were examined and the anodic photocurrent of the ITO electrode modified by the monolayer LB film of HMAPN was measured as 835 nA/cm2 under the white light of 218.2 mW/cm2 without bias voltage. The effects of light intensity, bias voltage on the photocurrent were discussed. The possible mechanism of the photocurrent formation was given.

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