ChemInform Abstract: Optical Properties of B12P2.
Abstract
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ChemInform Abstract
The absorption edge and its low-energy tail in polycrystalline B12P2 prepared by CVD on Si substrates is optically determined and analyzed with respect to indirect allowed interbond transitions and gap-state related transitions. The energies of six out of ten gap-state related transitions are consistent with electron traps generated by electron- phonon interaction in β-rhombohedral boron. The number of one- phonon resonance frequencies agrees with that group-theoretically predicted and the two-phonon processes indicate a low dispersion of phonon branches. The excitation of electrons from the gap states into the conduction band causes strong luminescence radiation attributed to strong structural fluctuations related to intrinsic electron traps in B12 icosahedra.
